Metal diffusion and surface pattern formation on GaAs and As2S3 semiconductors

I. Iván, I. Szabó, I. Mojzes, S. Kökényesi, A. Nemcsics, M. Suszter, S. Misák

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The possible changes of composition, phase transformations at the surface were investigated in GaAs samples, covered with 50 nm thick Au layer and annealed at different temperatures. Diffusion processes at metal-semiconductor interface determine the surface pattern formation, which has fractal structure. Comparison was made with interdiffusion processes in Au-amorphous As2S3 and Bi-As2S3 structures, which were found as useful for micro and macroscopic surface relief formation, optical recording due to the additional photo-stimulated diffusion.

Original languageEnglish
Title of host publication26th International Spring Seminar on Electronics Technology
Subtitle of host publicationIntegrated Management of Electronic Materials Production, ISSE 2003 - Conference Proceedings
EditorsAlena Pietrikova, Jan Urbancik
PublisherIEEE Computer Society
Pages71-73
Number of pages3
ISBN (Electronic)0780380029
DOIs
Publication statusPublished - Jan 1 2003
Event26th International Spring Seminar on Electronics Technology, ISSE 2003 - High Tatras, Slovakia
Duration: May 8 2003May 11 2003

Publication series

NameProceedings of the International Spring Seminar on Electronics Technology
Volume2003-January
ISSN (Print)2161-2528
ISSN (Electronic)2161-2536

Other

Other26th International Spring Seminar on Electronics Technology, ISSE 2003
CountrySlovakia
CityHigh Tatras
Period5/8/035/11/03

    Fingerprint

Keywords

  • Annealing
  • Crystallization
  • Gallium arsenide
  • Gold
  • Indium phosphide
  • Materials science and technology
  • Pattern formation
  • Physics
  • Scanning electron microscopy
  • Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Iván, I., Szabó, I., Mojzes, I., Kökényesi, S., Nemcsics, A., Suszter, M., & Misák, S. (2003). Metal diffusion and surface pattern formation on GaAs and As2S3 semiconductors. In A. Pietrikova, & J. Urbancik (Eds.), 26th International Spring Seminar on Electronics Technology: Integrated Management of Electronic Materials Production, ISSE 2003 - Conference Proceedings (pp. 71-73). [1260486] (Proceedings of the International Spring Seminar on Electronics Technology; Vol. 2003-January). IEEE Computer Society. https://doi.org/10.1109/ISSE.2003.1260486