Memory irradiation measurements for the European SMART-1 spacecraft

D. Novák, A. Kerek, L. O. Norlin, G. Dajkó, A. Fenyvesi, J. Molnár, G. Székely, L. Granholm, S. Wallin, A. Matilainen, A. Virtanen

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

Three different types of memory circuits, that are intended to be used on board of the European satellite SMART-1, have been radiation hardness tested according to ESA's specification. Since the satellite is equipped with an electric propulsion engine, the spacecraft will be exposed to radiation during a long time when passing the radiation belt of the Earth. A standard DRAM circuit from SAMSUNG will serve as building block of the mass memory of SMART-1, and has been tested for total dose and proton induced Single Event Upset (SEU). The DRAM memory showed surprisingly good resistance against radiation. The proton SEU cross sections for the radiation tolerant SRAM and FIFO circuits have also been measured and the results are within the requirements for SMART-1.

Original languageEnglish
Pages445-449
Number of pages5
Publication statusPublished - Dec 1 2002
Event2001 6th European Conference on Radiation and Its Effects on Components and Systems - Grenoble, France
Duration: Sep 10 2001Sep 14 2001

Other

Other2001 6th European Conference on Radiation and Its Effects on Components and Systems
CountryFrance
CityGrenoble
Period9/10/019/14/01

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ASJC Scopus subject areas

  • Radiation
  • Electrical and Electronic Engineering

Cite this

Novák, D., Kerek, A., Norlin, L. O., Dajkó, G., Fenyvesi, A., Molnár, J., Székely, G., Granholm, L., Wallin, S., Matilainen, A., & Virtanen, A. (2002). Memory irradiation measurements for the European SMART-1 spacecraft. 445-449. Paper presented at 2001 6th European Conference on Radiation and Its Effects on Components and Systems, Grenoble, France.