Memory effects in orthorhombic TaS3

G. Mihály, L. Mihály

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The pulse sign memory (SM) and its relation to the metastable low field conductivity (conductivity memory, CM) was investigated in orthorombic TaS3 in the temperature range of 90-160K. The response to the pulses of alternating sign shows a well characterized charging process if the electric field in the sample exceeds a critical value E′MS. For short samples, the SM and nonlinear conductivity separate quite well, E′MS is smaller than the ET threshold field of the nonlinear conductivity and it is equal to the critical field of the metastable ohmic conductivity change. Moreover, the SM and the CM show similar temperature dependence indicating that the underlying mechanism is common to the two phenomena.

Original languageEnglish
Pages (from-to)449-452
Number of pages4
JournalSolid State Communications
Volume48
Issue number5
DOIs
Publication statusPublished - 1983

Fingerprint

Data storage equipment
conductivity
pulses
charging
Electric fields
Temperature
temperature dependence
thresholds
electric fields
temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Memory effects in orthorhombic TaS3. / Mihály, G.; Mihály, L.

In: Solid State Communications, Vol. 48, No. 5, 1983, p. 449-452.

Research output: Contribution to journalArticle

Mihály, G. ; Mihály, L. / Memory effects in orthorhombic TaS3. In: Solid State Communications. 1983 ; Vol. 48, No. 5. pp. 449-452.
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