Memory effect on CdSe nanocrystals embedded in SiO2 matrix

S. Levichev, P. Basa, Zs J. Horváth, A. Chahboun, A. G. Rolo, N. P. Barradas, E. Alves, M. J.M. Gomes

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

CdSe nanocrystals (NCs) embedded in a solid SiO2 matrix were fabricated by RF-sputtering technique. Raman and photoluminescence spectroscopy illustrated the NCs size dependent confinement effect. The CdSe NCs charging effects were electrically characterized by means of capacitance-voltage measurements. A memory effect was demonstrated through memory window measurements.

Original languageEnglish
Pages (from-to)105-108
Number of pages4
JournalSolid State Communications
Volume148
Issue number3-4
DOIs
Publication statusPublished - Oct 1 2008

Keywords

  • A. Semiconductors
  • B. Magnetron sputtering
  • D. Memory effect
  • D. Recombination and trapping

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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    Levichev, S., Basa, P., Horváth, Z. J., Chahboun, A., Rolo, A. G., Barradas, N. P., Alves, E., & Gomes, M. J. M. (2008). Memory effect on CdSe nanocrystals embedded in SiO2 matrix. Solid State Communications, 148(3-4), 105-108. https://doi.org/10.1016/j.ssc.2008.07.047