Memory effect on CdSe nanocrystals embedded in SiO2 matrix

S. Levichev, P. Basa, Zs J. Horváth, A. Chahboun, A. G. Rolo, N. P. Barradas, E. Alves, M. J.M. Gomes

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10 Citations (Scopus)

Abstract

CdSe nanocrystals (NCs) embedded in a solid SiO2 matrix were fabricated by RF-sputtering technique. Raman and photoluminescence spectroscopy illustrated the NCs size dependent confinement effect. The CdSe NCs charging effects were electrically characterized by means of capacitance-voltage measurements. A memory effect was demonstrated through memory window measurements.

Original languageEnglish
Pages (from-to)105-108
Number of pages4
JournalSolid State Communications
Volume148
Issue number3-4
DOIs
Publication statusPublished - Oct 1 2008

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Keywords

  • A. Semiconductors
  • B. Magnetron sputtering
  • D. Memory effect
  • D. Recombination and trapping

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Levichev, S., Basa, P., Horváth, Z. J., Chahboun, A., Rolo, A. G., Barradas, N. P., Alves, E., & Gomes, M. J. M. (2008). Memory effect on CdSe nanocrystals embedded in SiO2 matrix. Solid State Communications, 148(3-4), 105-108. https://doi.org/10.1016/j.ssc.2008.07.047