Medium energy ion-nanoprobe with TOF-RBS for semiconductor process analysis

K. Iwasaki, J. Tajima, H. Takayama, F. Pászti, M. Takai

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

100-200 keV Be and Si ion beams from an ion-nanoprobe have been used to provide good lateral resolution and enhanced scattering cross section in Rutherford backscattering spectroscopy. A time-of-flight detecting system combining 1-2 ns beam pulses with a large area micro-channel-plate detector was installed to obtain high counting rates at moderate sample damage. A small (∼6 pC) measuring fluence, corresponding to a dose of 9 × 1012 cm-2, already results in useful spectra. Time resolution of ≤6 ns provides adequate mass and depth resolution, the latter around 0.06 μm for 100 keV Be in Si, while a chopping frequency of 100 kHz enables short measuring times.

Original languageEnglish
Pages (from-to)296-300
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume190
Issue number1-4
DOIs
Publication statusPublished - May 2002

Fingerprint

Nanoprobes
Rutherford backscattering spectroscopy
Ion beams
Scattering
Ions
Semiconductor materials
Detectors
ions
microchannel plates
scattering cross sections
energy
backscattering
counting
fluence
ion beams
damage
dosage
detectors
pulses
spectroscopy

Keywords

  • Focused ion beam
  • IBA
  • RBS
  • Si
  • TOF

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Medium energy ion-nanoprobe with TOF-RBS for semiconductor process analysis. / Iwasaki, K.; Tajima, J.; Takayama, H.; Pászti, F.; Takai, M.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 190, No. 1-4, 05.2002, p. 296-300.

Research output: Contribution to journalArticle

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