Mechanical properties of bismuth implanted amorphous Ge film

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Mechanical properties of Bi ion implanted a-Ge film were studied by dynamic microhardness tests and compared to those of unimplanted a-Ge film. 400 nm thick films were evaporated in units of 30 nm thick layers and bombarded with Bi ions at 60 keV energy and 2 μ/cm2 current. Cyclic load-unload indentation tests and indentation creep tests were performed to determine the hardness and ductility of the ion implanted and unimplanted specimens, respectively. The brittleness of the materials was characterised by scanning electron microscopic observation of crack formation around the Vickers indentations. The dynamic hardness was much larger, the ductility lower, the crack formation was significantly larger in the case of the unimplanted than in the ion bombarded specimens. The observed differences in the mechanical properties indicate structural differences between the two types of a-Ge are in agreement with the earlier reported formation of a new amorphous phase of Ge induced by ion implantation (G. Peto, J. Kanski, U. Sodervall, Phys. Lett. 124 (1987) 510 [6]).

Original languageEnglish
Pages (from-to)355-359
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-4
Publication statusPublished - Jan 1 1999


  • Amorphous germanium
  • Ion implantation
  • Mechanical properties

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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