Abstract
A technique for the measurement of doping and mobility depth profiles in GaAs epitaxial layers is reported. The design as well as preparation technology of a test chip, an automated measurement set-up for on-wafer measurements and a cryostat for temperature dependent measurements are described.
| Original language | English |
|---|---|
| Pages (from-to) | 21-30 |
| Number of pages | 10 |
| Journal | Acta Physica Hungarica |
| Volume | 74 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - Mar 1994 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Measurement techniques for the determination of doping and mobility profiles in GaAs epitaxial layers. / Szentpáli, B.; Kovács, B.; Riesz, F.; Tuyen, V. V.
In: Acta Physica Hungarica, Vol. 74, No. 1-2, 03.1994, p. 21-30.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Measurement techniques for the determination of doping and mobility profiles in GaAs epitaxial layers
AU - Szentpáli, B.
AU - Kovács, B.
AU - Riesz, F.
AU - Tuyen, V. V.
PY - 1994/3
Y1 - 1994/3
N2 - A technique for the measurement of doping and mobility depth profiles in GaAs epitaxial layers is reported. The design as well as preparation technology of a test chip, an automated measurement set-up for on-wafer measurements and a cryostat for temperature dependent measurements are described.
AB - A technique for the measurement of doping and mobility depth profiles in GaAs epitaxial layers is reported. The design as well as preparation technology of a test chip, an automated measurement set-up for on-wafer measurements and a cryostat for temperature dependent measurements are described.
UR - http://www.scopus.com/inward/record.url?scp=25944450984&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=25944450984&partnerID=8YFLogxK
U2 - 10.1007/BF03055234
DO - 10.1007/BF03055234
M3 - Article
AN - SCOPUS:25944450984
VL - 74
SP - 21
EP - 30
JO - Acta Physica Hungarica
JF - Acta Physica Hungarica
SN - 0231-4428
IS - 1-2
ER -