Measurement techniques for the determination of doping and mobility profiles in GaAs epitaxial layers

B. Szentpáli, B. Kovács, F. Riesz, V. V. Tuyen

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A technique for the measurement of doping and mobility depth profiles in GaAs epitaxial layers is reported. The design as well as preparation technology of a test chip, an automated measurement set-up for on-wafer measurements and a cryostat for temperature dependent measurements are described.

Original languageEnglish
Pages (from-to)21-30
Number of pages10
JournalActa Physica Hungarica
Volume74
Issue number1-2
DOIs
Publication statusPublished - Mar 1994

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profiles
cryostats
chips
wafers
preparation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Measurement techniques for the determination of doping and mobility profiles in GaAs epitaxial layers. / Szentpáli, B.; Kovács, B.; Riesz, F.; Tuyen, V. V.

In: Acta Physica Hungarica, Vol. 74, No. 1-2, 03.1994, p. 21-30.

Research output: Contribution to journalArticle

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