Abstract
A technique for the measurement of doping and mobility depth profiles in GaAs epitaxial layers is reported. The design as well as preparation technology of a test chip, an automated measurement set-up for on-wafer measurements and a cryostat for temperature dependent measurements are described.
| Original language | English |
|---|---|
| Pages (from-to) | 21-30 |
| Number of pages | 10 |
| Journal | Acta Physica Hungarica |
| Volume | 74 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - Mar 1 1994 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Szentpáli, B., Kovács, B., Riesz, F., & Tuyen, V. V. (1994). Measurement techniques for the determination of doping and mobility profiles in GaAs epitaxial layers. Acta Physica Hungarica, 74(1-2), 21-30. https://doi.org/10.1007/BF03055234