In this work the differential cross sections for gamma-ray emission from the 14N(d,pγ)15N (Eγ = 1885, 2297, 7299 and 8310 keV) and from the 28Si(d,pγ)29Si (Eγ = 1273, 2028, 2426 and 4934 keV) were measured simultaneously with the 14N(d,p4,5,6,7)15N differential cross sections and 14N(d,d)14N elastic scattering cross section using a HPGe detector at 55 and an ion implanted Si detector at 135 with respect to the beam direction in the deuteron energy range 0.65-2.0 MeV. The target was a thin silicon-nitride film. Gamma-ray angular distribution measurements were performed to determine the possible anisotropy of the gamma-ray emission, and the measured cross section values were converted into total gamma-ray producing cross sections for most of the gamma-ray emissions. The average uncertainties of nitrogen and silicon gamma-ray production cross sections are 5% and 12%, respectively and 8% concerning the particle production cross section of natN(d,d0)natN and 14N(d,p 4,5,6,7)15N reactions.
|Number of pages||7|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - Jun 1 2014|
- Silicon-nitride film, Cross sections for gamma-ray and particles
ASJC Scopus subject areas
- Nuclear and High Energy Physics