Measurement of four-photon absorption in GaP and ZnTe semiconductors

B. Monoszlai, P. S. Nugraha, G. Y. Tóth, G. Y. Polónyi, L. Pálfalvi, L. Nasi, Z. Ollmann, E. J. Rohwer, G. Gäumann, J. Hebling, T. Feurer, J. A. Fülöp

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Intensity-dependent effective four-photon absorption (4PA) coefficients in GaP and ZnTe semiconductors were measured by the z-scan method using pump pulses of 1.75 µm wavelength, 135 fs duration, and up to 500 GWcm−2 intensity. A nonlinear pulse propagation model, including linear dispersion and 4PA was used to obtain the 4PA coefficients from measurements. The intensity-dependent effective 4PA coefficients vary from 2.6 × 10−4 to 65 × 10−4 cm5GW−3 in GaP, and from 3.5 × 10−4 to 9.1 × 10−4 cm5GW−3 in ZnTe. The anisotropy in 4PA was shown in GaP. The knowledge of 4PA coefficients is important for the design of semiconductor photonics devices.

Original languageEnglish
Article number382388
JournalOptics Express
Issue number8
Publication statusPublished - Apr 13 2020

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Monoszlai, B., Nugraha, P. S., Tóth, G. Y., Polónyi, G. Y., Pálfalvi, L., Nasi, L., Ollmann, Z., Rohwer, E. J., Gäumann, G., Hebling, J., Feurer, T., & Fülöp, J. A. (2020). Measurement of four-photon absorption in GaP and ZnTe semiconductors. Optics Express, 28(8), [382388].