Measurement of As diffusivity in Ni2Si thin films

I. Blum, A. Portavoce, D. Mangelinck, R. Daineche, K. Hoummada, J. L. Lábár, V. Carron, J. Bernardini

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The lattice and grain boundary diffusion coefficients of As in 260 nm-thick Ni2Si films were measured. The Ni2Si layers were prepared via the reaction between a Si layer deposited by low pressure chemical vapor deposition and a Ni layer deposited by magnetron sputtering on a Si substrate covered with a SiO2 film. As was implanted in the silicide. Its concentration profiles were measured using secondary ion mass spectroscopy before and after annealing (550-700 °C). 2D finite element diffusion simulations taking into account lattice diffusion and grain boundary (GB) diffusion were performed based on the microstructure of the samples. They were found to fit accurately the measured profiles and allowed to measure the diffusion coefficients for each temperature. Lattice diffusion is characterized by a pre-exponential factor D0v ∼ 1.5 × 10-1 cm2 s-1 and an activation energy Qv ∼ 2.72 eV. In the case of GB diffusion P0 = sδD0gb = 9.0 × 10-3 cm3 s-1 and the activation energy was found to be higher than for lattice diffusion with Qgb ∼ 3.07 eV. Existing data concerning diffusion in silicides and other materials is used to discuss these results. The diffusion of As in Ni2Si could be reduced due to impurity segregation in GBs.

Original languageEnglish
Pages (from-to)263-266
Number of pages4
JournalMicroelectronic Engineering
Volume87
Issue number3
DOIs
Publication statusPublished - Mar 2010

Fingerprint

diffusivity
Thin films
thin films
grain boundaries
Grain boundaries
diffusion coefficient
Crystal lattices
activation energy
Activation energy
silicides
profiles
Low pressure chemical vapor deposition
Silicides
thick films
magnetron sputtering
mass spectroscopy
Thick films
low pressure
Magnetron sputtering
vapor deposition

Keywords

  • Arsenic
  • Diffusion
  • Grain boundaries
  • Nickel silicides
  • Polycrystal
  • Simulations

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Blum, I., Portavoce, A., Mangelinck, D., Daineche, R., Hoummada, K., Lábár, J. L., ... Bernardini, J. (2010). Measurement of As diffusivity in Ni2Si thin films. Microelectronic Engineering, 87(3), 263-266. https://doi.org/10.1016/j.mee.2009.05.020

Measurement of As diffusivity in Ni2Si thin films. / Blum, I.; Portavoce, A.; Mangelinck, D.; Daineche, R.; Hoummada, K.; Lábár, J. L.; Carron, V.; Bernardini, J.

In: Microelectronic Engineering, Vol. 87, No. 3, 03.2010, p. 263-266.

Research output: Contribution to journalArticle

Blum, I, Portavoce, A, Mangelinck, D, Daineche, R, Hoummada, K, Lábár, JL, Carron, V & Bernardini, J 2010, 'Measurement of As diffusivity in Ni2Si thin films', Microelectronic Engineering, vol. 87, no. 3, pp. 263-266. https://doi.org/10.1016/j.mee.2009.05.020
Blum I, Portavoce A, Mangelinck D, Daineche R, Hoummada K, Lábár JL et al. Measurement of As diffusivity in Ni2Si thin films. Microelectronic Engineering. 2010 Mar;87(3):263-266. https://doi.org/10.1016/j.mee.2009.05.020
Blum, I. ; Portavoce, A. ; Mangelinck, D. ; Daineche, R. ; Hoummada, K. ; Lábár, J. L. ; Carron, V. ; Bernardini, J. / Measurement of As diffusivity in Ni2Si thin films. In: Microelectronic Engineering. 2010 ; Vol. 87, No. 3. pp. 263-266.
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