MBE growth of different hexagonal GaN crystal structures on vicinal (100) GaAs substrates

A. Georgakilas, Z. Czigány, K. Amimer, V. Yu Davydov, L. Tóth, B. Pécz

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

GaN thin films of different hexagonal crystal structures have been grown by radio-frequency nitrogen plasma source molecular beam epitaxy (RFMBE) on vicinal (100) GaAs substrates. Polycrystalline hexagonal material occurred for high temperature (630°C) nitridation of the GaAs surface or low temperatures of the initial GaN buffer layer deposition. On the contrary, initial GaN growth at 540°C gave hexagonal single crystals with [0001] axis either inclined at approximately 43° from the growth axis or aligned parallel to it. The GaN orientation depended on the annealing or not, respectively, of the initial low temperature buffer layer.

Original languageEnglish
Pages (from-to)16-18
Number of pages3
JournalMaterials Science and Engineering B
Volume82
Issue number1-3
DOIs
Publication statusPublished - May 22 2001

Fingerprint

Molecular beam epitaxy
buffers
Crystal structure
Buffer layers
crystal structure
nitrogen plasma
Substrates
surface temperature
Nitrogen plasma
radio frequencies
Polycrystalline materials
molecular beam epitaxy
Nitridation
Plasma sources
Temperature
annealing
single crystals
thin films
Single crystals
Annealing

Keywords

  • GaN
  • GaN on GaAs
  • MBE
  • Structure
  • TEM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

MBE growth of different hexagonal GaN crystal structures on vicinal (100) GaAs substrates. / Georgakilas, A.; Czigány, Z.; Amimer, K.; Davydov, V. Yu; Tóth, L.; Pécz, B.

In: Materials Science and Engineering B, Vol. 82, No. 1-3, 22.05.2001, p. 16-18.

Research output: Contribution to journalArticle

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AU - Pécz, B.

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