Mass spectrometric study of semiconductor layer structures

D. Szigethy, G. Gergely, I. Mojzes, T. Sebestyén, M. Riedel

Research output: Contribution to journalArticle

Abstract

The mass spectrometric study of the evaporation of As and P, respectively, during contacting of GaAs and GaP diodes was reported at the 7th International Vacuum Congress (Vienna 1977). Now new results obtained on various contact-crystal systems are presented. A laboratory SIMS systems was built using a Riber QML 51 quadrupole mass spectrometer. The study of contacting processes was followed by SIMS in depth profiling of the contact-GaAs layer structures. Some SIMS studies of SiO2 layers prepared by various methods are described.

Original languageEnglish
Pages (from-to)199-205
Number of pages7
JournalActa Physica Academiae Scientiarum Hungaricae
Volume49
Issue number1-3
DOIs
Publication statusPublished - Aug 1 1980

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

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