Mapping of Bragg-surface diffraction of InP/GaAs(1 0 0) structure

L. H. Avanci, M. A. Hayashi, L. P. Cardoso, S. L. Morelhão, F. Riesz, K. Rakennus, T. Hakkarainen

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Abstract

InP/GaAs(1 0 0) heterostructures grown by gas-source molecular-beam epitaxy were analyzed using three-beam bragg-surface diffraction (BSD) of the X-ray multiple diffraction (MD) phenomenon. The angular MD condition is scanned by varying both, the ω incidence angle and the Φ rotation angle around [1 0 0] in order to provide the mapping of this condition. From the two-dimensional mapping - ω : Φ scan, the crystalline perfection (mosaic spread) parallel (ηΦ) and perpendicular (ηω) to the growth direction can be investigated along the layer surface and the substrate interface. The ω:Φ scan of the 0 0 0, 2 0 0, 1 1̄ 1 BSD is used to analyze the growth processing and post-growth annealing of InP/GaAs samples. The effect of various defect-reduction tools on layer and substrate crystal quality is also investigated.

Original languageEnglish
Pages (from-to)220-224
Number of pages5
JournalJournal of Crystal Growth
Volume188
Issue number1-4
DOIs
Publication statusPublished - Jun 1 1998

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Keywords

  • Bragg-surface diffraction
  • GSMBE
  • III-V compounds
  • X-ray multiple diffraction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Avanci, L. H., Hayashi, M. A., Cardoso, L. P., Morelhão, S. L., Riesz, F., Rakennus, K., & Hakkarainen, T. (1998). Mapping of Bragg-surface diffraction of InP/GaAs(1 0 0) structure. Journal of Crystal Growth, 188(1-4), 220-224. https://doi.org/10.1016/S0022-0248(98)00074-8