Makyoh topography for the study of large-area extended defects in semiconductors

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A quantitative approach to the Makyoh-topography image formation mechanism is presented. General relations are given on the optical settings; geometrical optical simulations of a sinusoidal surface and a hillock (or depression) are presented. Optimum working conditions are established, and general features of the imaging are pointed out. The experimental images taken for Si wafers are compared to the results of the model.

Original languageEnglish
Pages (from-to)403-409
Number of pages7
JournalPhysica Status Solidi (A) Applied Research
Volume171
Issue number1
Publication statusPublished - 1999

Fingerprint

Topography
topography
Image processing
Semiconductor materials
Imaging techniques
Defects
defects
wafers
simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Makyoh topography for the study of large-area extended defects in semiconductors. / Riesz, F.

In: Physica Status Solidi (A) Applied Research, Vol. 171, No. 1, 1999, p. 403-409.

Research output: Contribution to journalArticle

@article{145a0a7c655241ec9590bc536317804c,
title = "Makyoh topography for the study of large-area extended defects in semiconductors",
abstract = "A quantitative approach to the Makyoh-topography image formation mechanism is presented. General relations are given on the optical settings; geometrical optical simulations of a sinusoidal surface and a hillock (or depression) are presented. Optimum working conditions are established, and general features of the imaging are pointed out. The experimental images taken for Si wafers are compared to the results of the model.",
author = "F. Riesz",
year = "1999",
language = "English",
volume = "171",
pages = "403--409",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - Makyoh topography for the study of large-area extended defects in semiconductors

AU - Riesz, F.

PY - 1999

Y1 - 1999

N2 - A quantitative approach to the Makyoh-topography image formation mechanism is presented. General relations are given on the optical settings; geometrical optical simulations of a sinusoidal surface and a hillock (or depression) are presented. Optimum working conditions are established, and general features of the imaging are pointed out. The experimental images taken for Si wafers are compared to the results of the model.

AB - A quantitative approach to the Makyoh-topography image formation mechanism is presented. General relations are given on the optical settings; geometrical optical simulations of a sinusoidal surface and a hillock (or depression) are presented. Optimum working conditions are established, and general features of the imaging are pointed out. The experimental images taken for Si wafers are compared to the results of the model.

UR - http://www.scopus.com/inward/record.url?scp=0032711403&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032711403&partnerID=8YFLogxK

M3 - Article

VL - 171

SP - 403

EP - 409

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 1

ER -