Makyoh topography for the study of large-area extended defects in semiconductors

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Abstract

A quantitative approach to the Makyoh-topography image formation mechanism is presented. General relations are given on the optical settings; geometrical optical simulations of a sinusoidal surface and a hillock (or depression) are presented. Optimum working conditions are established, and general features of the imaging are pointed out. The experimental images taken for Si wafers are compared to the results of the model.

Original languageEnglish
Pages (from-to)403-409
Number of pages7
JournalPhysica Status Solidi (A) Applied Research
Volume171
Issue number1
DOIs
Publication statusPublished - Jan 1 1999

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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