Makyoh topography for the studies of extended defects: Possibilities and limitations

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Abstract

The sensitivity of Makyoh topography is analysed using analytic model calculations for the study of surface topographical fingerprints of localised defects. The effects of non-ideal collimation of the illumination is considered. Supporting experimental data on the investigation of the swirl defect in p-type Si wafers are presented. A height sensitivity of better than 30 nm over 1.5 mm spatial period is demonstrated by comparison to surface stylus profiling.

Original languageEnglish
Pages (from-to)1948-1952
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume6
Issue number8
DOIs
Publication statusPublished - 2009

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topography
sensitivity
defects
collimation
illumination
wafers

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

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title = "Makyoh topography for the studies of extended defects: Possibilities and limitations",
abstract = "The sensitivity of Makyoh topography is analysed using analytic model calculations for the study of surface topographical fingerprints of localised defects. The effects of non-ideal collimation of the illumination is considered. Supporting experimental data on the investigation of the swirl defect in p-type Si wafers are presented. A height sensitivity of better than 30 nm over 1.5 mm spatial period is demonstrated by comparison to surface stylus profiling.",
author = "F. Riesz",
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