Magnetoresistance in a hybrid ferromagnetic/semiconductor device

G. Papp, F. M. Peeters

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Ballistic transport of a two-dimensional electron gas (2DEG) in a rectangle shaped wire, subjected to a local nonhomogeneous magnetic field that results from an in-plane magnetized ferromagnetic (FM) strip deposited above the 2DEG, is investigated theoretically. We found a positive magnetoresistance (MR), which exhibits hysteresis behavior with respect to the direction of the magnetic field sweep, in agreement with a recent experiment. This positive MR can be tuned by applying a gate voltage to the FM strip.

Original languageEnglish
Article number063718
JournalJournal of Applied Physics
Volume107
Issue number6
DOIs
Publication statusPublished - Apr 14 2010

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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