LPE growth of GaAs1-xSbx

E. Lendvay, T. Görög, A. Tóth

Research output: Contribution to journalArticle

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Abstract

Single and multilayer ternary GaAs1±xSbx and quaternary AlyGa1±yAs xSbx systems were grown by LPE onto (100)GaAs substrates, investigating the As-rich side of the phase diagram. The composition of solid phase was investigated by microprobe analysis. Two major observations have been made; (a) GaAsxSbx epitaxial layers grown by the usual LPE techniques in the solid composition range of x ≤ 0.1 and above 750°C show mirror like surfaces and practically homogeneous composition. (b) GaAs1±xSbx layers produced by LPE, cooling the system down below this temperature show the presence at least two regions; one rich in As, the other in Sb. Owing to the dislocation network originating as a consequence of the misfit, the surfaces of these layers consists of aligned ridges and elements with cubic symmetry. The formation of Sb-rich (generally GaSb) layer is independent of the melt composition. Its presence was proved by microprobe analysis as well as by optical measurements. Similar observations were made on AlyGayAs xSbx layers. For the quaternary the critical temperature, in agreement with previously published value, was found to be 715°C. Undoped GaAs1±xSbx layers showed p-type conduction with ρ{variant} 10-2 Ω cm, p = 5× 1017-2×1018 cm-3 and room temperature hole mobility of 260-280 cm2 V-1 s-1.

Original languageEnglish
Pages (from-to)591-597
Number of pages7
JournalJournal of Crystal Growth
Volume53
Issue number3
DOIs
Publication statusPublished - 1981

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Chemical analysis
Hole mobility
Epitaxial layers
Temperature
Phase diagrams
Multilayers
Mirrors
hole mobility
Cooling
optical measurement
solid phases
ridges
critical temperature
Substrates
phase diagrams
mirrors
cooling
conduction
symmetry
room temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

LPE growth of GaAs1-xSbx. / Lendvay, E.; Görög, T.; Tóth, A.

In: Journal of Crystal Growth, Vol. 53, No. 3, 1981, p. 591-597.

Research output: Contribution to journalArticle

Lendvay, E. ; Görög, T. ; Tóth, A. / LPE growth of GaAs1-xSbx. In: Journal of Crystal Growth. 1981 ; Vol. 53, No. 3. pp. 591-597.
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