Low temperature metal-semiconductor interaction in Al/n-GaAs and Al/n-AlGaAs junctions

Zs J. Horváth, A. I.A. Elsawirki, Sz Varga, L. Csontos, J. Karányi, K. Somogyi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Al/n-GaAs and Al/n-AlGaAs Schottky junctions prepared on epitaxial layers grown by different methods, were studied by current-voltage and capacitance-voltage measurements as a junction of temperature, It was concluded that the obtained anomalies of electrical behaviour are connected with the interaction of Al with GaAs and AlGaAs at temperatures as low as 50°C.

Original languageEnglish
Title of host publicationASDAM 2004 - Conference Proceedings, 5th International Conference on Semiconductor Devices and Microsystmes
EditorsJ. Osvald, S. Hascik, J. Osvald, S. Hascik
Pages95-98
Number of pages4
Publication statusPublished - Dec 1 2004
EventASDAM 2004 - 5th International Conference on Semiconductor Devices and Microsystmes - Smolenics Castle, Slovakia
Duration: Oct 17 2004Oct 21 2004

Publication series

NameASDAM 2004 - Conference Proceedings, 5th International Conference on Semiconductor Devices and Microsystmes

Other

OtherASDAM 2004 - 5th International Conference on Semiconductor Devices and Microsystmes
CountrySlovakia
CitySmolenics Castle
Period10/17/0410/21/04

ASJC Scopus subject areas

  • Engineering(all)

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    Horváth, Z. J., Elsawirki, A. I. A., Varga, S., Csontos, L., Karányi, J., & Somogyi, K. (2004). Low temperature metal-semiconductor interaction in Al/n-GaAs and Al/n-AlGaAs junctions. In J. Osvald, S. Hascik, J. Osvald, & S. Hascik (Eds.), ASDAM 2004 - Conference Proceedings, 5th International Conference on Semiconductor Devices and Microsystmes (pp. 95-98). (ASDAM 2004 - Conference Proceedings, 5th International Conference on Semiconductor Devices and Microsystmes).