Low temperature formation of copper rich silicides

Erzsébet Dodony, György Z. Radnóczi, I. Dódony

Research output: Contribution to journalArticle

Abstract

The reactions of copper and amorphous silicon were studied by in-situ transmission electron microscopy up to 500 °C. Only the Cu76Si24-η phase and the Cu82Si18-δ phase formed at this temperature. The crystal structure of the dominating Cu76Si24 changed, by the elapsed time after heating. The Cu–Si ordering resulted in different supercells, built up by topologically identical subcells with different site occupancies and arrangement. Two modulated crystal structures were solved based on diffraction data and HRTEM images.

Original languageEnglish
Pages (from-to)108-115
Number of pages8
JournalIntermetallics
Volume107
DOIs
Publication statusPublished - Apr 1 2019

Fingerprint

Silicides
Copper
Crystal structure
Amorphous silicon
Diffraction
Transmission electron microscopy
Heating
Temperature

Keywords

  • Copper-silicide
  • Crystal structure
  • Electron crystallography
  • Modulation

ASJC Scopus subject areas

  • Chemistry(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Low temperature formation of copper rich silicides. / Dodony, Erzsébet; Radnóczi, György Z.; Dódony, I.

In: Intermetallics, Vol. 107, 01.04.2019, p. 108-115.

Research output: Contribution to journalArticle

Dodony, Erzsébet ; Radnóczi, György Z. ; Dódony, I. / Low temperature formation of copper rich silicides. In: Intermetallics. 2019 ; Vol. 107. pp. 108-115.
@article{5cd61a4dfeb04e00931ffbe0468001e8,
title = "Low temperature formation of copper rich silicides",
abstract = "The reactions of copper and amorphous silicon were studied by in-situ transmission electron microscopy up to 500 °C. Only the Cu76Si24-η phase and the Cu82Si18-δ phase formed at this temperature. The crystal structure of the dominating Cu76Si24 changed, by the elapsed time after heating. The Cu–Si ordering resulted in different supercells, built up by topologically identical subcells with different site occupancies and arrangement. Two modulated crystal structures were solved based on diffraction data and HRTEM images.",
keywords = "Copper-silicide, Crystal structure, Electron crystallography, Modulation",
author = "Erzs{\'e}bet Dodony and Radn{\'o}czi, {Gy{\"o}rgy Z.} and I. D{\'o}dony",
year = "2019",
month = "4",
day = "1",
doi = "10.1016/j.intermet.2019.01.010",
language = "English",
volume = "107",
pages = "108--115",
journal = "Intermetallics",
issn = "0966-9795",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Low temperature formation of copper rich silicides

AU - Dodony, Erzsébet

AU - Radnóczi, György Z.

AU - Dódony, I.

PY - 2019/4/1

Y1 - 2019/4/1

N2 - The reactions of copper and amorphous silicon were studied by in-situ transmission electron microscopy up to 500 °C. Only the Cu76Si24-η phase and the Cu82Si18-δ phase formed at this temperature. The crystal structure of the dominating Cu76Si24 changed, by the elapsed time after heating. The Cu–Si ordering resulted in different supercells, built up by topologically identical subcells with different site occupancies and arrangement. Two modulated crystal structures were solved based on diffraction data and HRTEM images.

AB - The reactions of copper and amorphous silicon were studied by in-situ transmission electron microscopy up to 500 °C. Only the Cu76Si24-η phase and the Cu82Si18-δ phase formed at this temperature. The crystal structure of the dominating Cu76Si24 changed, by the elapsed time after heating. The Cu–Si ordering resulted in different supercells, built up by topologically identical subcells with different site occupancies and arrangement. Two modulated crystal structures were solved based on diffraction data and HRTEM images.

KW - Copper-silicide

KW - Crystal structure

KW - Electron crystallography

KW - Modulation

UR - http://www.scopus.com/inward/record.url?scp=85060677966&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85060677966&partnerID=8YFLogxK

U2 - 10.1016/j.intermet.2019.01.010

DO - 10.1016/j.intermet.2019.01.010

M3 - Article

AN - SCOPUS:85060677966

VL - 107

SP - 108

EP - 115

JO - Intermetallics

JF - Intermetallics

SN - 0966-9795

ER -