Low pressure detection by depletion channel MOS transistors

T. Mohácsy, M. Ádám, I. Bársony, S. Kulinyi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Membrane thickness and resistivity limitation in the sensitivity of piezoresitive pressure sensors can be overcome by means of depletion mode p-channel MOST bridge elements. Over an order of magnitude increase in sensitivity could be achieved with the same membrane thickness. Cyclic stressing (30-times) at 25°C and 80°C by 500 pressure pulses (0- 1,6bar) respectively resulted in excellent stability of the device.

Original languageEnglish
Title of host publicationESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference
EditorsR.P. Mertens, H. Grunbacher, H.E. Maes, G. Declerck
PublisherIEEE Computer Society
Pages328-331
Number of pages4
ISBN (Electronic)2863322451, 9782863322451
Publication statusPublished - Jan 1 1999
Event29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, Belgium
Duration: Sep 13 1999Sep 15 1999

Publication series

NameEuropean Solid-State Device Research Conference
Volume13-15 Sept. 1999
ISSN (Print)1930-8876

Other

Other29th European Solid-State Device Research Conference, ESSDERC 1999
CountryBelgium
CityLeuven
Period9/13/999/15/99

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Mohácsy, T., Ádám, M., Bársony, I., & Kulinyi, S. (1999). Low pressure detection by depletion channel MOS transistors. In R. P. Mertens, H. Grunbacher, H. E. Maes, & G. Declerck (Eds.), ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference (pp. 328-331). [1505506] (European Solid-State Device Research Conference; Vol. 13-15 Sept. 1999). IEEE Computer Society.