Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver

Jonghyun Shin, Pallab Bhattacharya, Hao Chih Yuan, Zhenqiang Ma, G. Váró

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A bacteriorhodopsin (bR)-silicon n-channel metal-oxide field-effect transistor (NMOSFET) monolithically integrated photoreceiver is demonstrated. The bR film is selectively formed on an external gate electrode of the transistor by electrophoretic deposition. A modified biasing circuit is incorporated, which helps to match the resistance of the bR film to the input impedance of the NMOSFET and to shift the operating point of the transistor to coincide with the maximum gain. The photoreceiver exhibits a responsivity of 4.7 mA/W.

Original languageEnglish
Pages (from-to)500-502
Number of pages3
JournalOptics Letters
Volume32
Issue number5
DOIs
Publication statusPublished - Mar 1 2007

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metal oxides
transistors
field effect transistors
silicon
impedance
electrodes
shift

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver. / Shin, Jonghyun; Bhattacharya, Pallab; Yuan, Hao Chih; Ma, Zhenqiang; Váró, G.

In: Optics Letters, Vol. 32, No. 5, 01.03.2007, p. 500-502.

Research output: Contribution to journalArticle

Shin, Jonghyun ; Bhattacharya, Pallab ; Yuan, Hao Chih ; Ma, Zhenqiang ; Váró, G. / Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver. In: Optics Letters. 2007 ; Vol. 32, No. 5. pp. 500-502.
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