Low frequency noise of GaAs Schottky diodes with embedded InAs quantum layer and self-assembled quantum dots

N. A. Hastas, C. A. Dimitriadis, L. Dózsa, E. Gombia, S. Amighetti, P. Frigeri

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

A study was performed on the low frequency noise of GaAs Schottky diodes with embedded InAs quantum layers (QL) and self-assembled quantum dots. The measurements were carried out in the forward conduction regime with forward current as the parameter. The current-voltage and capacitance-voltage characteristics showed that the GaAs and GaAs/InAs-QL Schottky diodes were nearly ideal.

Original languageEnglish
Pages (from-to)3990-3994
Number of pages5
JournalJournal of Applied Physics
Volume93
Issue number7
DOIs
Publication statusPublished - Apr 1 2003

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Schottky diodes
quantum dots
low frequencies
capacitance-voltage characteristics
conduction
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Low frequency noise of GaAs Schottky diodes with embedded InAs quantum layer and self-assembled quantum dots. / Hastas, N. A.; Dimitriadis, C. A.; Dózsa, L.; Gombia, E.; Amighetti, S.; Frigeri, P.

In: Journal of Applied Physics, Vol. 93, No. 7, 01.04.2003, p. 3990-3994.

Research output: Contribution to journalArticle

Hastas, N. A. ; Dimitriadis, C. A. ; Dózsa, L. ; Gombia, E. ; Amighetti, S. ; Frigeri, P. / Low frequency noise of GaAs Schottky diodes with embedded InAs quantum layer and self-assembled quantum dots. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 7. pp. 3990-3994.
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