A study was performed on the low frequency noise of GaAs Schottky diodes with embedded InAs quantum layers (QL) and self-assembled quantum dots. The measurements were carried out in the forward conduction regime with forward current as the parameter. The current-voltage and capacitance-voltage characteristics showed that the GaAs and GaAs/InAs-QL Schottky diodes were nearly ideal.
ASJC Scopus subject areas
- Physics and Astronomy(all)