Low frequency noise of GaAs Schottky diodes with embedded InAs quantum layer and self-assembled quantum dots

N. A. Hastas, C. A. Dimitriadis, L. Dozsa, E. Gombia, S. Amighetti, P. Frigeri

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

A study was performed on the low frequency noise of GaAs Schottky diodes with embedded InAs quantum layers (QL) and self-assembled quantum dots. The measurements were carried out in the forward conduction regime with forward current as the parameter. The current-voltage and capacitance-voltage characteristics showed that the GaAs and GaAs/InAs-QL Schottky diodes were nearly ideal.

Original languageEnglish
Pages (from-to)3990-3994
Number of pages5
JournalJournal of Applied Physics
Volume93
Issue number7
DOIs
Publication statusPublished - Apr 1 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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