Low energy ion mixing in Si-Ge multilayer system

M. Menyhard, A. Barna, A. Sulyok, K. Järrendahl, J. E. Sundgren, J. P. Biersack

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AES depth profiling was carried out on a Ge-Si multilayer structure using rotated specimen and grazing incidence angle. Under these sputtering conditions the depth resolution is determined mainly by atomic mixing. The dependence of the experimentally measured atomic mixing on incidence angle and energy was compared with the simulation results obtained from TRIM code. It was found that the trends of the dependencies were the same, but the TRIM predicted weaker atomic mixing than that of the experimental one. Thus we concluded that consideration of the thermal processes is also important in the description of the atomic mixing in the Ge-Si system.

Original languageEnglish
Pages (from-to)383-387
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Issue number1-4
Publication statusPublished - Mar 2 1994


ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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