Low energy ion mixing in Si-Ge multilayer system

M. Menyhárd, A. Barna, A. Sulyok, K. Järrendahl, J. E. Sundgren, J. P. Biersack

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

AES depth profiling was carried out on a Ge-Si multilayer structure using rotated specimen and grazing incidence angle. Under these sputtering conditions the depth resolution is determined mainly by atomic mixing. The dependence of the experimentally measured atomic mixing on incidence angle and energy was compared with the simulation results obtained from TRIM code. It was found that the trends of the dependencies were the same, but the TRIM predicted weaker atomic mixing than that of the experimental one. Thus we concluded that consideration of the thermal processes is also important in the description of the atomic mixing in the Ge-Si system.

Original languageEnglish
Pages (from-to)383-387
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume85
Issue number1-4
DOIs
Publication statusPublished - Mar 2 1994

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Multilayers
Ions
ions
incidence
Depth profiling
energy
grazing incidence
laminates
Sputtering
sputtering
trends
simulation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Low energy ion mixing in Si-Ge multilayer system. / Menyhárd, M.; Barna, A.; Sulyok, A.; Järrendahl, K.; Sundgren, J. E.; Biersack, J. P.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 85, No. 1-4, 02.03.1994, p. 383-387.

Research output: Contribution to journalArticle

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