Local capacitance analysis using a modified deep level spectrometer

L. Dózsa, Štefan Lányi

Research output: Contribution to journalArticle

Abstract

A bimorph-based xz scanner and an amplifier, increasing the capacitance and current measurement sensitivities 250-times and 1000-times, respectively, have been built into the cryostat of a deep level transient spectrometer. The setup renders point by point local capacitance-voltage (C-V) at 1 MHz and dc currentvoltage (I-V) measurements using a sharp tip placed into tunnelling distance from the surface of analysed semiconductor sample. The C-V measurements revealed a strong dependence on the probe/sample separation, ranging from MOS-type at small tunnelling currents to Schottky-type at currents exceeding approximately 10 pA. Marked hysteresis was observed, indicating changes of surface state occupancy. These slow states are otherwise hardly detected, since they are absent in semiconductor/metal contacts and in MOS structures they would become mostly passivated interface states. The setup enables calibrated, fixed zero level capacitance measurement. The stray capacitance is the dominant component of the measured capacitance but it can be easily discarded.

Original languageEnglish
Pages (from-to)1178-1182
Number of pages5
JournalCentral European Journal of Physics
Volume10
Issue number5
DOIs
Publication statusPublished - Oct 2012

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capacitance
spectrometers
cryostats
electrical measurement
scanners
electric contacts
amplifiers
hysteresis
probes
electric potential
metals

Keywords

  • capacitance measurement
  • scanning capacitance microscopy
  • scanning capacitance spectroscopy
  • surface states

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Local capacitance analysis using a modified deep level spectrometer. / Dózsa, L.; Lányi, Štefan.

In: Central European Journal of Physics, Vol. 10, No. 5, 10.2012, p. 1178-1182.

Research output: Contribution to journalArticle

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