Light emission versus excitation from porous structures in ion-implanted silicon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The quantum efficiency of electroluminescence (EL) in porous silicon structures (PSL) is practically limited by the mechanical instability of higher porosity layers. This can be overcome by adding a thin implanted p+ surface region before the formation of PSL. The resulting structure consisted of different morphologies depending on the local doping level. When the implantation doping level and diffusion depth was increased, reduced photoluminescence (PL) from the otherwise strongly emitting buried PSL of 80% porosity was obtained. Spectroscopic ellipsometry provided detailed analysis of optical transmission of PSL prepared on a boron implanted substrate. Since the spectral transmission of PSL is morphology dependent, in this novel structure the excitation wavelength can be absorbed in the upper mesoporous p+ region, which is much more transparent for the visible emission spectrum. The width and peak position as well as integral intensity of EL spectra during anodic oxidation of the novel, workable structure were not affected by the doping level in the thin surface region.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages653-658
Number of pages6
Volume358
Publication statusPublished - 1995
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Nov 30 1994

Other

OtherProceedings of the 1994 MRS Fall Meeting
CityBoston, MA, USA
Period11/28/9411/30/94

Fingerprint

Porous silicon
Light emission
Silicon
Ions
Doping (additives)
Electroluminescence
Porosity
Boron
Spectroscopic ellipsometry
Anodic oxidation
Light transmission
Quantum efficiency
Ion implantation
Photoluminescence
Wavelength
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Vázsonyi, E., Bársony, I., Lohner, T., Fried, M., Erostyak, J., Racz, M., & Pászti, F. (1995). Light emission versus excitation from porous structures in ion-implanted silicon. In Materials Research Society Symposium - Proceedings (Vol. 358, pp. 653-658). Materials Research Society.

Light emission versus excitation from porous structures in ion-implanted silicon. / Vázsonyi, E.; Bársony, I.; Lohner, T.; Fried, M.; Erostyak, J.; Racz, M.; Pászti, F.

Materials Research Society Symposium - Proceedings. Vol. 358 Materials Research Society, 1995. p. 653-658.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vázsonyi, E, Bársony, I, Lohner, T, Fried, M, Erostyak, J, Racz, M & Pászti, F 1995, Light emission versus excitation from porous structures in ion-implanted silicon. in Materials Research Society Symposium - Proceedings. vol. 358, Materials Research Society, pp. 653-658, Proceedings of the 1994 MRS Fall Meeting, Boston, MA, USA, 11/28/94.
Vázsonyi E, Bársony I, Lohner T, Fried M, Erostyak J, Racz M et al. Light emission versus excitation from porous structures in ion-implanted silicon. In Materials Research Society Symposium - Proceedings. Vol. 358. Materials Research Society. 1995. p. 653-658
Vázsonyi, E. ; Bársony, I. ; Lohner, T. ; Fried, M. ; Erostyak, J. ; Racz, M. ; Pászti, F. / Light emission versus excitation from porous structures in ion-implanted silicon. Materials Research Society Symposium - Proceedings. Vol. 358 Materials Research Society, 1995. pp. 653-658
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abstract = "The quantum efficiency of electroluminescence (EL) in porous silicon structures (PSL) is practically limited by the mechanical instability of higher porosity layers. This can be overcome by adding a thin implanted p+ surface region before the formation of PSL. The resulting structure consisted of different morphologies depending on the local doping level. When the implantation doping level and diffusion depth was increased, reduced photoluminescence (PL) from the otherwise strongly emitting buried PSL of 80{\%} porosity was obtained. Spectroscopic ellipsometry provided detailed analysis of optical transmission of PSL prepared on a boron implanted substrate. Since the spectral transmission of PSL is morphology dependent, in this novel structure the excitation wavelength can be absorbed in the upper mesoporous p+ region, which is much more transparent for the visible emission spectrum. The width and peak position as well as integral intensity of EL spectra during anodic oxidation of the novel, workable structure were not affected by the doping level in the thin surface region.",
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AU - Racz, M.

AU - Pászti, F.

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N2 - The quantum efficiency of electroluminescence (EL) in porous silicon structures (PSL) is practically limited by the mechanical instability of higher porosity layers. This can be overcome by adding a thin implanted p+ surface region before the formation of PSL. The resulting structure consisted of different morphologies depending on the local doping level. When the implantation doping level and diffusion depth was increased, reduced photoluminescence (PL) from the otherwise strongly emitting buried PSL of 80% porosity was obtained. Spectroscopic ellipsometry provided detailed analysis of optical transmission of PSL prepared on a boron implanted substrate. Since the spectral transmission of PSL is morphology dependent, in this novel structure the excitation wavelength can be absorbed in the upper mesoporous p+ region, which is much more transparent for the visible emission spectrum. The width and peak position as well as integral intensity of EL spectra during anodic oxidation of the novel, workable structure were not affected by the doping level in the thin surface region.

AB - The quantum efficiency of electroluminescence (EL) in porous silicon structures (PSL) is practically limited by the mechanical instability of higher porosity layers. This can be overcome by adding a thin implanted p+ surface region before the formation of PSL. The resulting structure consisted of different morphologies depending on the local doping level. When the implantation doping level and diffusion depth was increased, reduced photoluminescence (PL) from the otherwise strongly emitting buried PSL of 80% porosity was obtained. Spectroscopic ellipsometry provided detailed analysis of optical transmission of PSL prepared on a boron implanted substrate. Since the spectral transmission of PSL is morphology dependent, in this novel structure the excitation wavelength can be absorbed in the upper mesoporous p+ region, which is much more transparent for the visible emission spectrum. The width and peak position as well as integral intensity of EL spectra during anodic oxidation of the novel, workable structure were not affected by the doping level in the thin surface region.

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