Lattice misfit and relative tilt of lattice planes in semiconductor heterostructures

A. Pesek, K. Hingerl, F. Riesz, K. Lischka

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

High resolution X-ray diffraction has been used to investigate the relative tilt between epilayer and substrate lattice planes of different semiconductor heterostructures. All epilayers were grown on (001) GaAs substrates misoriented by 2 degrees towards the next (011) direction. Results on the amount of the relative tilt and the direction of the maximum relative tilt are presented. The authors find that for heterostructures with small misfit (f0.05) an angle of about 90 degrees between the direction of maximum relative tilt and the direction of the miscut substrate has been observed.

Original languageEnglish
Article number026
Pages (from-to)705-708
Number of pages4
JournalSemiconductor Science and Technology
Volume6
Issue number7
DOIs
Publication statusPublished - 1991

Fingerprint

Crystal lattices
Heterojunctions
Epilayers
Semiconductor materials
Substrates
X ray diffraction
Direction compound
high resolution
diffraction
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lattice misfit and relative tilt of lattice planes in semiconductor heterostructures. / Pesek, A.; Hingerl, K.; Riesz, F.; Lischka, K.

In: Semiconductor Science and Technology, Vol. 6, No. 7, 026, 1991, p. 705-708.

Research output: Contribution to journalArticle

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