Lattice location and dopant behavior of group II and VI elements implanted in silicon

J. Gyulai, O MEYER O, RD PASHLEY RD, JW MEYER JW

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Outdiffusion, lattice location and electrical behavior of Zn, Cd, Hg and Se, Te implanted into silicon at 50 kev were investigated by backscattering and channeling effect of 1 Mev HeU ions and by Hall effect and sheet resistivity measurements. All the species exhibited outdiffusion with thermal processing.

Original languageEnglish
Pages (from-to)17-24
Number of pages8
JournalRadiation Effects
Volume7
Issue number1-2
Publication statusPublished - Jan 1971

Fingerprint

Hall effect
Silicon
Backscattering
Chemical elements
backscattering
Doping (additives)
Ions
electrical resistivity
silicon
ions

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Gyulai, J., MEYER O, O., PASHLEY RD, RD., & MEYER JW, JW. (1971). Lattice location and dopant behavior of group II and VI elements implanted in silicon. Radiation Effects, 7(1-2), 17-24.

Lattice location and dopant behavior of group II and VI elements implanted in silicon. / Gyulai, J.; MEYER O, O; PASHLEY RD, RD; MEYER JW, JW.

In: Radiation Effects, Vol. 7, No. 1-2, 01.1971, p. 17-24.

Research output: Contribution to journalArticle

Gyulai, J, MEYER O, O, PASHLEY RD, RD & MEYER JW, JW 1971, 'Lattice location and dopant behavior of group II and VI elements implanted in silicon', Radiation Effects, vol. 7, no. 1-2, pp. 17-24.
Gyulai, J. ; MEYER O, O ; PASHLEY RD, RD ; MEYER JW, JW. / Lattice location and dopant behavior of group II and VI elements implanted in silicon. In: Radiation Effects. 1971 ; Vol. 7, No. 1-2. pp. 17-24.
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