Lattice curvature of InxGa1-xAs/GaAs [001] graded buffer layers

F. Romanato, M. Natali, E. Napolitani, A. V. Drigo, A. Bosacchi, C. Ferrari, S. Franchi, G. Salviati

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Abstract

Ion channeling analysis and x-ray diffraction reciprocal space maps have been performed on InxGa1-xAs buffer layers grown with different composition profiles on well-cut (001) GaAs substrates. On all of the samples analyzed we detect a curvature of the layer lattice, i.e., a tilt of the lattice with respect to the substrate which varies coherently along the sample surface. The layer tilt is directed inward defining a curvature that is concave, large (up to 2.5° cm-1) and that decreases when approaching the substrate. We describe this new phenomenon in terms of a coherent lateral distribution of the orientations of the misfit dislocation Burgers' vectors.

Original languageEnglish
Pages (from-to)3578-3881
Number of pages304
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume16
Issue number6
Publication statusPublished - Nov 1 1998

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Romanato, F., Natali, M., Napolitani, E., Drigo, A. V., Bosacchi, A., Ferrari, C., Franchi, S., & Salviati, G. (1998). Lattice curvature of InxGa1-xAs/GaAs [001] graded buffer layers. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 16(6), 3578-3881.