Ion channeling analysis and x-ray diffraction reciprocal space maps have been performed on InxGa1-xAs buffer layers grown with different composition profiles on well-cut (001) GaAs substrates. On all of the samples analyzed we detect a curvature of the layer lattice, i.e., a tilt of the lattice with respect to the substrate which varies coherently along the sample surface. The layer tilt is directed inward defining a curvature that is concave, large (up to 2.5° cm-1) and that decreases when approaching the substrate. We describe this new phenomenon in terms of a coherent lateral distribution of the orientations of the misfit dislocation Burgers' vectors.
|Number of pages||304|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - Nov 1 1998|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films