Laterally stacked porous silicon multilayers for subquart micron period UV gratings

J. Volk, N. Norbert, I. Bársony

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A novel method was presented to prepare porous silicon Bragg grating structures. With this technique the grating period can be easily tuned in a wide range. In the porous silicon multilayer formation there is no theoretical limit for the period to be lowered to even below 100 nm. Both phase and mixed type (amplitude and phase) optical grating are demonstrated. Another unique feature of these structures is, that contrary to the case of commonly used porous silicon layers, here the pores are lying parallel to the wafer surface. This might be a valuable asset e.g. in microfluidic-type sensor development. The paper discusses design and processing constraints.

Original languageEnglish
Pages (from-to)1707-1711
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume202
Issue number8
DOIs
Publication statusPublished - Jun 2005

Fingerprint

Porous silicon
porous silicon
Multilayers
Diffraction gratings
gratings
Bragg gratings
Microfluidics
wafers
porosity
sensors
Sensors
Processing

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Laterally stacked porous silicon multilayers for subquart micron period UV gratings. / Volk, J.; Norbert, N.; Bársony, I.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 202, No. 8, 06.2005, p. 1707-1711.

Research output: Contribution to journalArticle

@article{d5a0ca94fdef48be9ab16de1b8e86a73,
title = "Laterally stacked porous silicon multilayers for subquart micron period UV gratings",
abstract = "A novel method was presented to prepare porous silicon Bragg grating structures. With this technique the grating period can be easily tuned in a wide range. In the porous silicon multilayer formation there is no theoretical limit for the period to be lowered to even below 100 nm. Both phase and mixed type (amplitude and phase) optical grating are demonstrated. Another unique feature of these structures is, that contrary to the case of commonly used porous silicon layers, here the pores are lying parallel to the wafer surface. This might be a valuable asset e.g. in microfluidic-type sensor development. The paper discusses design and processing constraints.",
author = "J. Volk and N. Norbert and I. B{\'a}rsony",
year = "2005",
month = "6",
doi = "10.1002/pssa.200461235",
language = "English",
volume = "202",
pages = "1707--1711",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley-VCH Verlag",
number = "8",

}

TY - JOUR

T1 - Laterally stacked porous silicon multilayers for subquart micron period UV gratings

AU - Volk, J.

AU - Norbert, N.

AU - Bársony, I.

PY - 2005/6

Y1 - 2005/6

N2 - A novel method was presented to prepare porous silicon Bragg grating structures. With this technique the grating period can be easily tuned in a wide range. In the porous silicon multilayer formation there is no theoretical limit for the period to be lowered to even below 100 nm. Both phase and mixed type (amplitude and phase) optical grating are demonstrated. Another unique feature of these structures is, that contrary to the case of commonly used porous silicon layers, here the pores are lying parallel to the wafer surface. This might be a valuable asset e.g. in microfluidic-type sensor development. The paper discusses design and processing constraints.

AB - A novel method was presented to prepare porous silicon Bragg grating structures. With this technique the grating period can be easily tuned in a wide range. In the porous silicon multilayer formation there is no theoretical limit for the period to be lowered to even below 100 nm. Both phase and mixed type (amplitude and phase) optical grating are demonstrated. Another unique feature of these structures is, that contrary to the case of commonly used porous silicon layers, here the pores are lying parallel to the wafer surface. This might be a valuable asset e.g. in microfluidic-type sensor development. The paper discusses design and processing constraints.

UR - http://www.scopus.com/inward/record.url?scp=25444496462&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=25444496462&partnerID=8YFLogxK

U2 - 10.1002/pssa.200461235

DO - 10.1002/pssa.200461235

M3 - Article

VL - 202

SP - 1707

EP - 1711

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 8

ER -