LATERAL GROWTH OF TITANIUM SILICIDE OVER A SILICON DIOXIDE LAYER.

P. Revesz, J. Gyimesi, L. Pogány, G. Pető

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

If a silicon dioxide step on a single crystal of silicon covered with titanium is annealed, then, following vertical growth on the silicon part, lateral growth of titanium silicide takes place over the oxide layer. In the temperature range 750-950 degree C this lateral growth of Ti-silicide was found to be a linear function of the square root of the annealing time. The activation energy of the lateral growth was found to be 1. 89 eV. During lateral growth the Ti-silicide forms a deep spike in the silicon crystal at the SiO//2 step.

Original languageEnglish
Pages (from-to)2114-2115
Number of pages2
JournalJournal of Applied Physics
Volume54
Issue number4
DOIs
Publication statusPublished - Apr 1983

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titanium
silicon dioxide
silicon
spikes
activation energy
annealing
oxides
single crystals
crystals
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

LATERAL GROWTH OF TITANIUM SILICIDE OVER A SILICON DIOXIDE LAYER. / Revesz, P.; Gyimesi, J.; Pogány, L.; Pető, G.

In: Journal of Applied Physics, Vol. 54, No. 4, 04.1983, p. 2114-2115.

Research output: Contribution to journalArticle

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