Lateral conductivity in GaAs/lnAs quantum dot structures

L. Dózsa, A. Tóth, Z. Horváth, P. Hubík, J. Krišiofik, J. J. Mareš, E. Gombia, R. Mosca, S. Franchi, P. Frigeri

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Lateral conductivity effects have been investigated in self-organised InAs quantum dot (QD) structures grown in a GaAs matrix with different cap layers. Current-voltage (I-V), capacitance-voltage (C-V), DLTS, capacitance and conductance frequency dependence, fast defect transient (FDT), and electron beam induced conductivity (EBIC) measurements were applied. The conductivity in the QD plane decays within a distance of 10 microns. The capacitance transients are dominated by the local QD-plane transversal conductivity and by the free carrier transport in the cap layer. The nonequilibrium free carrier created by electron beam excitation develop a potential barrier at macroscopic distances from the electrical contacts.

Original languageEnglish
Pages (from-to)93-95
Number of pages3
JournalEPJ Applied Physics
Volume27
Issue number1-3
DOIs
Publication statusPublished - Jul 2004

Fingerprint

Semiconductor quantum dots
Capacitance
quantum dots
conductivity
Electron beams
capacitance
caps
Deep level transient spectroscopy
Carrier transport
Electric potential
electron beams
electric potential
electric contacts
Defects
gallium arsenide
defects
decay
matrices
excitation
indium arsenide

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lateral conductivity in GaAs/lnAs quantum dot structures. / Dózsa, L.; Tóth, A.; Horváth, Z.; Hubík, P.; Krišiofik, J.; Mareš, J. J.; Gombia, E.; Mosca, R.; Franchi, S.; Frigeri, P.

In: EPJ Applied Physics, Vol. 27, No. 1-3, 07.2004, p. 93-95.

Research output: Contribution to journalArticle

Dózsa, L, Tóth, A, Horváth, Z, Hubík, P, Krišiofik, J, Mareš, JJ, Gombia, E, Mosca, R, Franchi, S & Frigeri, P 2004, 'Lateral conductivity in GaAs/lnAs quantum dot structures', EPJ Applied Physics, vol. 27, no. 1-3, pp. 93-95. https://doi.org/10.1051/epjap:2004113
Dózsa, L. ; Tóth, A. ; Horváth, Z. ; Hubík, P. ; Krišiofik, J. ; Mareš, J. J. ; Gombia, E. ; Mosca, R. ; Franchi, S. ; Frigeri, P. / Lateral conductivity in GaAs/lnAs quantum dot structures. In: EPJ Applied Physics. 2004 ; Vol. 27, No. 1-3. pp. 93-95.
@article{df29df7f16f04022b614dbfee7726b08,
title = "Lateral conductivity in GaAs/lnAs quantum dot structures",
abstract = "Lateral conductivity effects have been investigated in self-organised InAs quantum dot (QD) structures grown in a GaAs matrix with different cap layers. Current-voltage (I-V), capacitance-voltage (C-V), DLTS, capacitance and conductance frequency dependence, fast defect transient (FDT), and electron beam induced conductivity (EBIC) measurements were applied. The conductivity in the QD plane decays within a distance of 10 microns. The capacitance transients are dominated by the local QD-plane transversal conductivity and by the free carrier transport in the cap layer. The nonequilibrium free carrier created by electron beam excitation develop a potential barrier at macroscopic distances from the electrical contacts.",
author = "L. D{\'o}zsa and A. T{\'o}th and Z. Horv{\'a}th and P. Hub{\'i}k and J. Krišiofik and Mareš, {J. J.} and E. Gombia and R. Mosca and S. Franchi and P. Frigeri",
year = "2004",
month = "7",
doi = "10.1051/epjap:2004113",
language = "English",
volume = "27",
pages = "93--95",
journal = "EPJ Applied Physics",
issn = "1286-0042",
publisher = "EDP Sciences",
number = "1-3",

}

TY - JOUR

T1 - Lateral conductivity in GaAs/lnAs quantum dot structures

AU - Dózsa, L.

AU - Tóth, A.

AU - Horváth, Z.

AU - Hubík, P.

AU - Krišiofik, J.

AU - Mareš, J. J.

AU - Gombia, E.

AU - Mosca, R.

AU - Franchi, S.

AU - Frigeri, P.

PY - 2004/7

Y1 - 2004/7

N2 - Lateral conductivity effects have been investigated in self-organised InAs quantum dot (QD) structures grown in a GaAs matrix with different cap layers. Current-voltage (I-V), capacitance-voltage (C-V), DLTS, capacitance and conductance frequency dependence, fast defect transient (FDT), and electron beam induced conductivity (EBIC) measurements were applied. The conductivity in the QD plane decays within a distance of 10 microns. The capacitance transients are dominated by the local QD-plane transversal conductivity and by the free carrier transport in the cap layer. The nonequilibrium free carrier created by electron beam excitation develop a potential barrier at macroscopic distances from the electrical contacts.

AB - Lateral conductivity effects have been investigated in self-organised InAs quantum dot (QD) structures grown in a GaAs matrix with different cap layers. Current-voltage (I-V), capacitance-voltage (C-V), DLTS, capacitance and conductance frequency dependence, fast defect transient (FDT), and electron beam induced conductivity (EBIC) measurements were applied. The conductivity in the QD plane decays within a distance of 10 microns. The capacitance transients are dominated by the local QD-plane transversal conductivity and by the free carrier transport in the cap layer. The nonequilibrium free carrier created by electron beam excitation develop a potential barrier at macroscopic distances from the electrical contacts.

UR - http://www.scopus.com/inward/record.url?scp=10344226672&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10344226672&partnerID=8YFLogxK

U2 - 10.1051/epjap:2004113

DO - 10.1051/epjap:2004113

M3 - Article

AN - SCOPUS:10344226672

VL - 27

SP - 93

EP - 95

JO - EPJ Applied Physics

JF - EPJ Applied Physics

SN - 1286-0042

IS - 1-3

ER -