Lateral conductivity in GaAs/lnAs quantum dot structures

L. Dózsa, A. L. Töth, Zs J. Horváth, P. Hubík, J. Krišiofik, J. J. Mareš, E. Gombia, R. Mosca, S. Franchi, P. Frigeri

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Lateral conductivity effects have been investigated in self-organised InAs quantum dot (QD) structures grown in a GaAs matrix with different cap layers. Current-voltage (I-V), capacitance-voltage (C-V), DLTS, capacitance and conductance frequency dependence, fast defect transient (FDT), and electron beam induced conductivity (EBIC) measurements were applied. The conductivity in the QD plane decays within a distance of 10 microns. The capacitance transients are dominated by the local QD-plane transversal conductivity and by the free carrier transport in the cap layer. The nonequilibrium free carrier created by electron beam excitation develop a potential barrier at macroscopic distances from the electrical contacts.

Original languageEnglish
Pages (from-to)93-95
Number of pages3
JournalEPJ Applied Physics
Volume27
Issue number1-3
DOIs
Publication statusPublished - Jul 1 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics

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    Dózsa, L., Töth, A. L., Horváth, Z. J., Hubík, P., Krišiofik, J., Mareš, J. J., Gombia, E., Mosca, R., Franchi, S., & Frigeri, P. (2004). Lateral conductivity in GaAs/lnAs quantum dot structures. EPJ Applied Physics, 27(1-3), 93-95. https://doi.org/10.1051/epjap:2004113