Laser technology for synthesis of AlN films: Influence of the incident laser fluence on the films microstructure

A. Szekeres, A. Cziraki, G. Huhn, K. Havancsak, E. Vlaikova, G. Socol, C. Ristoscu, I. N. Mihailescu

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Thin AlN films were synthesized by pulsed laser deposition at 800 °C by a KrF* excimer laser source (λ = 248 nm, τ = 25 ns, 3 Hz) at fluences of 4.8, 8.6 and 10 J/cm2 in nitrogen ambient at a dynamic pressure varying from 0.1 to 10 Pa. The film microstructurewas studied by X-ray diffractometry, while the film surface morphology of AlN films was examined by AFM imaging. At the low laser fluence (4.8 J/cm2), a stable hexagonal AlN phase was formed, while at the intermediate laser fluence (8.6 J/cm 2), both hexagonal and metastable cubic crystallites were observed. At the high laser fluence (10 J/cm2), the films were "XRD amorphous". The surface roughness shows a tendency to increase with the increase in the nitrogen pressure. The root-mean-square roughness values are 0. 2 - 5 nm, depending on N2 pressure.

Original languageEnglish
Article number012003
JournalJournal of Physics: Conference Series
Volume356
Issue number1
DOIs
Publication statusPublished - Jan 1 2012
Event17th International Summer School on Vacuum, Electron, and Ion Technologies, VEIT 2011 - Sunny Beach, Bulgaria
Duration: Sep 19 2011Sep 23 2011

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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