Optical spectroscopy and TEM analysis of laser synthesized indium selenide thin films show that the sandwich structures processed at relatively low power densities are not transformed homogeneously throughout the whole depth but an amount of In and Se remains at the bottom and the top, respectively. With increasing processing power density the absorption edges of the compounds synthesized shift towards higher photon energies. High enough irradiation results in high quality homogeneous films of optical parameters close to the single crystal values.
|Title of host publication||Unknown Host Publication Title|
|Editors||D. Baeuerle, K.L. Kompa, L. Laude|
|Publisher||Les Editions de Physique|
|Number of pages||5|
|Publication status||Published - Dec 1 1986|
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