Laser spectroscopic study of photoinduced picosecond processes in amorphous and polycrystalline silicon films

M. Kubinyi, A. Grofcsik, W. Jeremy Jones

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Picosecond photoinduced absorption and reflection curves of hydrogenated amorphous Silicon (a-Si:H), dehydrogenated amorphous silicon (a-Si) and polycrystalline silicon (p-Si) samples have been recorded at charge carrier densities of ~ 1020 cm-3. The temporal decays of the photoinduced changes in the real and imaginary parts of the refractive index have been computed. The results suggest that the relaxation of the photogenerated carders is dominated by a monomolecular recombination in a-Si:H and a-Si, whereas the relaxation is non-exponential in p-Si where it may be controlled by the diffusion of the carriers to the grain boundaries.

Original languageEnglish
Pages (from-to)121-124
Number of pages4
JournalJournal of Molecular Structure
Volume408-409
DOIs
Publication statusPublished - Jun 1 1997

Fingerprint

Silicon
silicon films
Amorphous silicon
Polysilicon
amorphous silicon
Lasers
silicon
Charge carriers
lasers
Carrier concentration
charge carriers
Refractive index
Grain boundaries
grain boundaries
refractivity
Refractometry
decay
curves
Genetic Recombination

Keywords

  • Amorphous silicon
  • Picosecond photoinduced absorption
  • Picosecond photoinduced reflection
  • Polycrystalline silicon

ASJC Scopus subject areas

  • Structural Biology
  • Organic Chemistry
  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

Cite this

Laser spectroscopic study of photoinduced picosecond processes in amorphous and polycrystalline silicon films. / Kubinyi, M.; Grofcsik, A.; Jones, W. Jeremy.

In: Journal of Molecular Structure, Vol. 408-409, 01.06.1997, p. 121-124.

Research output: Contribution to journalArticle

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