Maskless deposition of gold and copper from electrolyte solutions onto n-doped semiconductors (GaAs, Si) is investigated. The metal deposits are found to have lateral dimensions of about 1 μm and are in barrier contact with the semiconductor. The proposed deposition mechanism is governed by the electric fields resulting from the Dember effect, the p-n junction, and the thermal emf.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)