Laser-induced metal deposition on semiconductors from liquid electrolytes

L. Nánai, I. Hevesi, F. V. Bunkin, B. S. Luk'yanchuk, M. R. Brook, G. A. Shafeev, Daniel A. Jelski, Z. C. Wu, Thomas F. George

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37 Citations (Scopus)

Abstract

Maskless deposition of gold and copper from electrolyte solutions onto n-doped semiconductors (GaAs, Si) is investigated. The metal deposits are found to have lateral dimensions of about 1 μm and are in barrier contact with the semiconductor. The proposed deposition mechanism is governed by the electric fields resulting from the Dember effect, the p-n junction, and the thermal emf.

Original languageEnglish
Pages (from-to)736-738
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number8
DOIs
Publication statusPublished - Dec 1 1989

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Nánai, L., Hevesi, I., Bunkin, F. V., Luk'yanchuk, B. S., Brook, M. R., Shafeev, G. A., Jelski, D. A., Wu, Z. C., & George, T. F. (1989). Laser-induced metal deposition on semiconductors from liquid electrolytes. Applied Physics Letters, 54(8), 736-738. https://doi.org/10.1063/1.100877