Laser-induced convection nanostructures on SiON/Si interface

A. Maksimović, S. Lugomer, Z. Geretovszky, T. Szörényi

Research output: Contribution to journalArticle

Abstract

The homogenized beam of an excimer KrF laser has been used to form rectangular millimeter-scale holes of vertical walls in the ∼1 μm thick silicon-oxynitride (SiON) thin film deposited on Si 〈 111 〉 wafer. The regular rectangular craters in SiON layer have the flat bottom surface reaching the SiON/Si interface. At the same time horizontal thermal gradient causes the formation of the nanoscale Marangoni convection structures at the SiON/Si interface. The inhomogeneous pattern of the roll structures can be divided into domains of regular, irregular, and chaotic organizations. The roll diameter is about 200 nm while their average wavelength, , is, ∼2 μm, i.e., about ten times larger than the laser wavelength, and decreases with increasing number of pulses. Numerical simulation of the Marangoni domain roll structures based on the simple Swift-Hohenberg equation has reproduced all observed types of the roll organization, including those that show the evolution of dislocations from the Eckhause instability.

Original languageEnglish
Article number124905
JournalJournal of Applied Physics
Volume104
Issue number12
DOIs
Publication statusPublished - 2008

Fingerprint

oxynitrides
convection
silicon
lasers
Marangoni convection
craters
wavelengths
excimer lasers
wafers
gradients
causes
thin films
pulses
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Laser-induced convection nanostructures on SiON/Si interface. / Maksimović, A.; Lugomer, S.; Geretovszky, Z.; Szörényi, T.

In: Journal of Applied Physics, Vol. 104, No. 12, 124905, 2008.

Research output: Contribution to journalArticle

@article{3d355ef56dcd45b4a32b238dddcef12c,
title = "Laser-induced convection nanostructures on SiON/Si interface",
abstract = "The homogenized beam of an excimer KrF laser has been used to form rectangular millimeter-scale holes of vertical walls in the ∼1 μm thick silicon-oxynitride (SiON) thin film deposited on Si 〈 111 〉 wafer. The regular rectangular craters in SiON layer have the flat bottom surface reaching the SiON/Si interface. At the same time horizontal thermal gradient causes the formation of the nanoscale Marangoni convection structures at the SiON/Si interface. The inhomogeneous pattern of the roll structures can be divided into domains of regular, irregular, and chaotic organizations. The roll diameter is about 200 nm while their average wavelength, , is, ∼2 μm, i.e., about ten times larger than the laser wavelength, and decreases with increasing number of pulses. Numerical simulation of the Marangoni domain roll structures based on the simple Swift-Hohenberg equation has reproduced all observed types of the roll organization, including those that show the evolution of dislocations from the Eckhause instability.",
author = "A. Maksimović and S. Lugomer and Z. Geretovszky and T. Sz{\"o}r{\'e}nyi",
year = "2008",
doi = "10.1063/1.3043881",
language = "English",
volume = "104",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Laser-induced convection nanostructures on SiON/Si interface

AU - Maksimović, A.

AU - Lugomer, S.

AU - Geretovszky, Z.

AU - Szörényi, T.

PY - 2008

Y1 - 2008

N2 - The homogenized beam of an excimer KrF laser has been used to form rectangular millimeter-scale holes of vertical walls in the ∼1 μm thick silicon-oxynitride (SiON) thin film deposited on Si 〈 111 〉 wafer. The regular rectangular craters in SiON layer have the flat bottom surface reaching the SiON/Si interface. At the same time horizontal thermal gradient causes the formation of the nanoscale Marangoni convection structures at the SiON/Si interface. The inhomogeneous pattern of the roll structures can be divided into domains of regular, irregular, and chaotic organizations. The roll diameter is about 200 nm while their average wavelength, , is, ∼2 μm, i.e., about ten times larger than the laser wavelength, and decreases with increasing number of pulses. Numerical simulation of the Marangoni domain roll structures based on the simple Swift-Hohenberg equation has reproduced all observed types of the roll organization, including those that show the evolution of dislocations from the Eckhause instability.

AB - The homogenized beam of an excimer KrF laser has been used to form rectangular millimeter-scale holes of vertical walls in the ∼1 μm thick silicon-oxynitride (SiON) thin film deposited on Si 〈 111 〉 wafer. The regular rectangular craters in SiON layer have the flat bottom surface reaching the SiON/Si interface. At the same time horizontal thermal gradient causes the formation of the nanoscale Marangoni convection structures at the SiON/Si interface. The inhomogeneous pattern of the roll structures can be divided into domains of regular, irregular, and chaotic organizations. The roll diameter is about 200 nm while their average wavelength, , is, ∼2 μm, i.e., about ten times larger than the laser wavelength, and decreases with increasing number of pulses. Numerical simulation of the Marangoni domain roll structures based on the simple Swift-Hohenberg equation has reproduced all observed types of the roll organization, including those that show the evolution of dislocations from the Eckhause instability.

UR - http://www.scopus.com/inward/record.url?scp=58149260520&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149260520&partnerID=8YFLogxK

U2 - 10.1063/1.3043881

DO - 10.1063/1.3043881

M3 - Article

AN - SCOPUS:58149260520

VL - 104

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

M1 - 124905

ER -