Laser induced backside wet etching of fused silica: Absorption coefficient dependence

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2 Citations (Scopus)


The micromachining process of transparent materials by laser induced backside wet etching (LIB WE) was investigated. Fused silica targets were irradiated by an ArF excimer laser at 2.14 J/cm2 fluence and naphthalene solved in methyl-methacrylate with different concentrations were used as absorbing liquid. The absorption coefficient of these solutions was measured by a plano-concave microcuvette and it found to be between 39426 and 62350 I/cm depending on the concentration of naphthalene. It was demonstrated that the etch rate depends on the absorption coefficient linearly, while the roughness does not. The dependence of the etch rate can be explained as follows. The absorbed energy in the interface of the solution and the fused silica increases when increasing the absorption coefficient resulting in higher temperature liquid layer at the surface of the fused silica causing higher etch rate.

Original languageEnglish
Pages (from-to)200-204
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - Dec 1 2002
EventThird GR-I International Conference on New Laser Technologies and Applications - Patras, Greece
Duration: Sep 5 2002Sep 8 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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