Laser-assisted atomic layer deposition of boron nitride thin films

Jenny Olander, L. Mikael Ottosson, Peter Heszler, Jan Oho Carlsson, Karin M.E. Larsson

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31 Citations (Scopus)

Abstract

Boron nitride thin films have been grown by both laser-assisted, and conventional atomic layer deposition (LALD/ALD) at temperatures in the range 250-750°C. Both the NH3 and BBr3 precursors were appreciably dissociated by the ArF excimer laser, and up to 600°C, the growth rate was 100% higher for the LALD process than for ALD. The films consisted of hydrogen-terminated turbostratic BN grains. H2 was theoretically found to bind as strongly as BBrx and NHx (X=0-2) to hBN(100) edges. The fresh films were stoichiometric with respect to B and N, and contained low degrees of contamination, but oxidized easily in air.

Original languageEnglish
Pages (from-to)330-337
Number of pages8
JournalChemical Vapor Deposition
Volume11
Issue number6-7
DOIs
Publication statusPublished - Jul 1 2005

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Keywords

  • ALD
  • Ab initio calculations
  • Boron nitride
  • LALD
  • Laser irradiation

ASJC Scopus subject areas

  • Chemistry(all)
  • Surfaces and Interfaces
  • Process Chemistry and Technology

Cite this

Olander, J., Ottosson, L. M., Heszler, P., Carlsson, J. O., & Larsson, K. M. E. (2005). Laser-assisted atomic layer deposition of boron nitride thin films. Chemical Vapor Deposition, 11(6-7), 330-337. https://doi.org/10.1002/cvde.200506365