Conventional (thermal) CVD of SiO2 is a well established method widely used e.g. in the microelectronic industry. Recognizing the big success of CO2 laser induced CVD in depositing high quality amorphous silicon (a-Si) films from silane it is quite surprising that - to the best of our knowledge- there has been no report on a-SiO2 thin film deposition initiated by a cw CO2 laser in parallel configuration. In this contribution we report the first results of a systematic study on cw CO2 laser induced CVD of silicon oxide films onto silicon wafers from SiH4 / N2O / Ar gas mixtures in parallel configuration in comparison with similar experiments for a-Si film formation. Gas mixture absorption behaviour and total pressure rise under laser irradiation demonstrate that the SiO2 production can be due to homogeneous gas heating similar to the a-Si:H deposition. The films deposited are characterized by IR transmission spectroscopy. The fact that well adhering silicon oxide films can be produced with reasonable growth rates by using a simple and inexpensive laser makes this method attractive for industrial applications.