Kinetics of shift of individual interfaces in Ni/Si system during low temperature reactions

S. S. Shenouda, G. Molnar, G. A. Langer, G. L. Katona, F. Kristály, D. L. Beke

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Nanocrystalline Ni(20 nm)/crystalline-Si and Ni(20 nm)/amorphous-Si systems were heat treated at 453 K and 473 K for 0.25-2 h. The formation of the reaction layer at the interface and the positions of the individual interfaces were followed by depth profiling using Secondary Neutral Mass Spectrometry and a profilometer. The kinetics of the shrinkage of the initial nanocrystalline Ni film and the Si layer, as well as the average growth kinetics of the product layer containing Ni2Si and NiSi phases, were determined in the very early stage of the solid state reaction. The kinetics of the Si and Ni shrinkage followed the parabolic growth law in both systems i.e. the change of the thicknesses were proportional to t1/2. In systems with a-Si, at longer annealing times, a layer with composition of about 40% Ni was developed suggesting the formation of the NiSi2. This was interpreted by the relatively high diffusivity of Ni in a-Si. Results on the effect of Pt on the enhanced homogeneity of the NiSi phase formed as well as on the growth kinetics are also presented.

Original languageEnglish
Pages (from-to)14-21
Number of pages8
JournalMicroelectronic Engineering
Volume134
DOIs
Publication statusPublished - Feb 20 2015

Fingerprint

Growth kinetics
Depth profiling
shift
kinetics
Solid state reactions
shrinkage
Mass spectrometry
Annealing
Crystalline materials
Temperature
profilometers
Chemical analysis
diffusivity
homogeneity
mass spectroscopy
solid state
heat
annealing
products
Hot Temperature

Keywords

  • Nano-scale
  • Shift of individual interfaces
  • Thin films

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Kinetics of shift of individual interfaces in Ni/Si system during low temperature reactions. / Shenouda, S. S.; Molnar, G.; Langer, G. A.; Katona, G. L.; Kristály, F.; Beke, D. L.

In: Microelectronic Engineering, Vol. 134, 20.02.2015, p. 14-21.

Research output: Contribution to journalArticle

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AU - Langer, G. A.

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AU - Kristály, F.

AU - Beke, D. L.

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