Kinetics of photoinduced surface patterning in chalcogenide thin films

Yu Kaganovskii, D. Beke, S. Kökényesi

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The kinetics of photoinduced variations in surface profile in chalcogenide glass films under illumination is described. It is demonstrated that the competition between the stress-induced atomic flux (toward irradiated regions of the film) and the diffusion flux induced by an increase in the bulk energy due to broken bonds (and directed from irradiated to dark regions) can result in either a positive or negative net mass transfer in the irradiated region. Depending on the light intensity, one can obtain either formation of bumps or depressions in the illuminated regions.

Original languageEnglish
Article number061906
JournalApplied Physics Letters
Volume97
Issue number6
DOIs
Publication statusPublished - Aug 9 2010

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kinetics
thin films
luminous intensity
mass transfer
illumination
glass
profiles
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kinetics of photoinduced surface patterning in chalcogenide thin films. / Kaganovskii, Yu; Beke, D.; Kökényesi, S.

In: Applied Physics Letters, Vol. 97, No. 6, 061906, 09.08.2010.

Research output: Contribution to journalArticle

@article{107bb9ee13254163b051eca2a893b074,
title = "Kinetics of photoinduced surface patterning in chalcogenide thin films",
abstract = "The kinetics of photoinduced variations in surface profile in chalcogenide glass films under illumination is described. It is demonstrated that the competition between the stress-induced atomic flux (toward irradiated regions of the film) and the diffusion flux induced by an increase in the bulk energy due to broken bonds (and directed from irradiated to dark regions) can result in either a positive or negative net mass transfer in the irradiated region. Depending on the light intensity, one can obtain either formation of bumps or depressions in the illuminated regions.",
author = "Yu Kaganovskii and D. Beke and S. K{\"o}k{\'e}nyesi",
year = "2010",
month = "8",
day = "9",
doi = "10.1063/1.3477957",
language = "English",
volume = "97",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Kinetics of photoinduced surface patterning in chalcogenide thin films

AU - Kaganovskii, Yu

AU - Beke, D.

AU - Kökényesi, S.

PY - 2010/8/9

Y1 - 2010/8/9

N2 - The kinetics of photoinduced variations in surface profile in chalcogenide glass films under illumination is described. It is demonstrated that the competition between the stress-induced atomic flux (toward irradiated regions of the film) and the diffusion flux induced by an increase in the bulk energy due to broken bonds (and directed from irradiated to dark regions) can result in either a positive or negative net mass transfer in the irradiated region. Depending on the light intensity, one can obtain either formation of bumps or depressions in the illuminated regions.

AB - The kinetics of photoinduced variations in surface profile in chalcogenide glass films under illumination is described. It is demonstrated that the competition between the stress-induced atomic flux (toward irradiated regions of the film) and the diffusion flux induced by an increase in the bulk energy due to broken bonds (and directed from irradiated to dark regions) can result in either a positive or negative net mass transfer in the irradiated region. Depending on the light intensity, one can obtain either formation of bumps or depressions in the illuminated regions.

UR - http://www.scopus.com/inward/record.url?scp=77955731210&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955731210&partnerID=8YFLogxK

U2 - 10.1063/1.3477957

DO - 10.1063/1.3477957

M3 - Article

AN - SCOPUS:77955731210

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 061906

ER -