Kinetics of photo-darkening and -bleaching in amorphous As20Se80 layers: Temperature dependence

S. Molnar, R. Bohdan, V. Takats, Y. U. Kaganovskii, K. Vad, S. Kokenyesi

Research output: Contribution to journalArticle

Abstract

Photo-darkening (PD) and surface relief (SR) recording is applicable for fabrication of photonic elements in amorphous chalcogenides. While SR in As20Se80 layers was found very efficient, the influence of PD on recording and thermal stability need to be established. Thermally activated transient and reversible components of PD were detected. From temperature dependent characteristic times of recording and erasing for both PD components rather low activation energies (17 and 13 meV) for the recording process and high activation energies (210 and 90 meV) for erasing were determined. The mechanisms of relevant processes and stability of optical relief recording are discussed.

Original languageEnglish
Pages (from-to)646-650
Number of pages5
JournalJournal of Optoelectronics and Advanced Materials
Volume20
Publication statusPublished - Nov 2018

Keywords

  • Activation energy
  • Amorphous chalcogenides
  • Optical recording
  • Photo-darkening
  • Temperature dependence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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