Kinetics of hydride disintegration in a 2D Si channel formation by the Si-GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures

L. K. Orlov, N. L. Ivina, A. V. Potapov, T. N. Smyslova, L. M. Vinogradsky, Z. J. Horvath

Research output: Contribution to journalConference article

2 Citations (Scopus)


In the present activity the properties of the Si/SiGe MODFET structure with a Si electronic transport channel in SiGe layer are studied. Larger attention is given to the interfaces of a channel and their influence on the electrical characteristics of a structure. Is shown, that in actual structures the kinetics of molecules disintegration not only determine a structure profile near interfaces, but also can promote the origin of nanostructural compositions in these areas. It can exhibit in a formation of arrays of quantum dots from one of component of solid solution on the layer boundary, resulting to a lot of effects as in longitudinal and transversal conductivity of the epitaxial structure.

Original languageEnglish
Pages (from-to)518-521
Number of pages4
JournalMicroelectronics Journal
Issue number3-6
Publication statusPublished - Mar 1 2005



  • Electrical properties
  • Growth kinetics
  • Microscopy
  • SiGe heterostructures

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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