Kinetics of hydride disintegration in a 2D Si channel formation by the Si-GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures

L. K. Orlov, N. L. Ivina, A. V. Potapov, T. N. Smyslova, L. M. Vinogradsky, Z. Horváth

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In the present activity the properties of the Si/SiGe MODFET structure with a Si electronic transport channel in SiGe layer are studied. Larger attention is given to the interfaces of a channel and their influence on the electrical characteristics of a structure. Is shown, that in actual structures the kinetics of molecules disintegration not only determine a structure profile near interfaces, but also can promote the origin of nanostructural compositions in these areas. It can exhibit in a formation of arrays of quantum dots from one of component of solid solution on the layer boundary, resulting to a lot of effects as in longitudinal and transversal conductivity of the epitaxial structure.

Original languageEnglish
Pages (from-to)518-521
Number of pages4
JournalMicroelectronics Journal
Volume36
Issue number3-6
DOIs
Publication statusPublished - Mar 2005

Fingerprint

blurring
Disintegration
disintegration
High electron mobility transistors
Molecular beam epitaxy
Hydrides
Semiconductor quantum dots
hydrides
Heterojunctions
Solid solutions
Boundary layers
Demonstrations
Molecules
Kinetics
kinetics
Chemical analysis
boundary layers
solid solutions
quantum dots
conductivity

Keywords

  • Electrical properties
  • Growth kinetics
  • Microscopy
  • SiGe heterostructures

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Kinetics of hydride disintegration in a 2D Si channel formation by the Si-GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures. / Orlov, L. K.; Ivina, N. L.; Potapov, A. V.; Smyslova, T. N.; Vinogradsky, L. M.; Horváth, Z.

In: Microelectronics Journal, Vol. 36, No. 3-6, 03.2005, p. 518-521.

Research output: Contribution to journalArticle

@article{bdd787beab2244059c51c240bec244d4,
title = "Kinetics of hydride disintegration in a 2D Si channel formation by the Si-GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures",
abstract = "In the present activity the properties of the Si/SiGe MODFET structure with a Si electronic transport channel in SiGe layer are studied. Larger attention is given to the interfaces of a channel and their influence on the electrical characteristics of a structure. Is shown, that in actual structures the kinetics of molecules disintegration not only determine a structure profile near interfaces, but also can promote the origin of nanostructural compositions in these areas. It can exhibit in a formation of arrays of quantum dots from one of component of solid solution on the layer boundary, resulting to a lot of effects as in longitudinal and transversal conductivity of the epitaxial structure.",
keywords = "Electrical properties, Growth kinetics, Microscopy, SiGe heterostructures",
author = "Orlov, {L. K.} and Ivina, {N. L.} and Potapov, {A. V.} and Smyslova, {T. N.} and Vinogradsky, {L. M.} and Z. Horv{\'a}th",
year = "2005",
month = "3",
doi = "10.1016/j.mejo.2005.02.106",
language = "English",
volume = "36",
pages = "518--521",
journal = "Microelectronics",
issn = "0026-2692",
publisher = "Elsevier Limited",
number = "3-6",

}

TY - JOUR

T1 - Kinetics of hydride disintegration in a 2D Si channel formation by the Si-GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures

AU - Orlov, L. K.

AU - Ivina, N. L.

AU - Potapov, A. V.

AU - Smyslova, T. N.

AU - Vinogradsky, L. M.

AU - Horváth, Z.

PY - 2005/3

Y1 - 2005/3

N2 - In the present activity the properties of the Si/SiGe MODFET structure with a Si electronic transport channel in SiGe layer are studied. Larger attention is given to the interfaces of a channel and their influence on the electrical characteristics of a structure. Is shown, that in actual structures the kinetics of molecules disintegration not only determine a structure profile near interfaces, but also can promote the origin of nanostructural compositions in these areas. It can exhibit in a formation of arrays of quantum dots from one of component of solid solution on the layer boundary, resulting to a lot of effects as in longitudinal and transversal conductivity of the epitaxial structure.

AB - In the present activity the properties of the Si/SiGe MODFET structure with a Si electronic transport channel in SiGe layer are studied. Larger attention is given to the interfaces of a channel and their influence on the electrical characteristics of a structure. Is shown, that in actual structures the kinetics of molecules disintegration not only determine a structure profile near interfaces, but also can promote the origin of nanostructural compositions in these areas. It can exhibit in a formation of arrays of quantum dots from one of component of solid solution on the layer boundary, resulting to a lot of effects as in longitudinal and transversal conductivity of the epitaxial structure.

KW - Electrical properties

KW - Growth kinetics

KW - Microscopy

KW - SiGe heterostructures

UR - http://www.scopus.com/inward/record.url?scp=33644596231&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644596231&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2005.02.106

DO - 10.1016/j.mejo.2005.02.106

M3 - Article

VL - 36

SP - 518

EP - 521

JO - Microelectronics

JF - Microelectronics

SN - 0026-2692

IS - 3-6

ER -