Kinetic pattern formation of Gd-silicide films in lateral growth geometry

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3 Citations (Scopus)

Abstract

The solid phase reaction of gadolinium thin film and silicon substrate was investigated in lateral growth geometry with the help of periodic titanium protective stripes by optical microscopy. In the lateral reaction zone the shape of the interface between gadolinium and Gd silicide was very complicated and showed pattern formation. This silicide growth can be described as a kinetic process modified by the structure of the Gd film in contrast to the previously proposed simple nucleation.

Original languageEnglish
Pages (from-to)1679-1680
Number of pages2
JournalApplied Physics Letters
Volume64
Issue number13
DOIs
Publication statusPublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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