Issues in testing advanced power semiconductor devices

Gabor Farkas, Zoltan Sarkany, M. Rencz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Thermal transient testing is a widely used tool in reliability testing of power semiconductors and structure integrity analysis of packages, cooling mounts etc. The paper demonstrates novel concepts for powering and sensing in thermal tests when wide bandgap compound semiconductor components (GaN, SiC) replace the traditional silicon. The major problems treated are the non-linearity of device parameters in broad temperature ranges and the slow effects (surface charge, carrier absorption on traps) which produce false transient signals in the time range where most information on the device structure can be obtained. We demonstrate that using the RDSON channel resistance or some parasitic effects of the bulk and gate region these obstacles can be overcome.

Original languageEnglish
Title of host publication32nd Annual Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2016 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages143-150
Number of pages8
VolumePart F121464
ISBN (Electronic)9781509023363
DOIs
Publication statusPublished - Apr 22 2016
Event32nd Annual Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2016 - San Jose, United States
Duration: Mar 14 2016Mar 17 2016

Other

Other32nd Annual Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2016
CountryUnited States
CitySan Jose
Period3/14/163/17/16

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Keywords

  • compound semiconductors
  • GaN
  • HEMT
  • IGBT
  • MISFET
  • power semiconductor devices
  • Si
  • SiC
  • Thermal testing
  • transient testing

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

Farkas, G., Sarkany, Z., & Rencz, M. (2016). Issues in testing advanced power semiconductor devices. In 32nd Annual Semiconductor Thermal Measurement and Management Symposium, SEMI-THERM 2016 - Proceedings (Vol. Part F121464, pp. 143-150). [7458458] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SEMI-THERM.2016.7458458