Iron silicide nanostructures prepared by E-Gun evaporation and annealing on Si(001)

Research output: Contribution to journalArticle

Abstract

Iron silicide nanostructures were grown on Si(001) by strain-induced, self-assembly method. E-gun evaporated iron particles were deposited both on to room temperature and high temperature Si substrates, and were further annealed in situ. The initial Fe thickness was in the 0.1-6 nm range and the annealing temperatures varied between 500 and 850°C. The phases and structures formed were characterized by the reflection high energy electron diffraction and by scanning electron microscopy. The electrical characteristics were investigated by I-V and C-V measurements, and by deep level transient spectroscopy. The size distributions of the formed iron silicide nanostructures were not homogeneous but, were oriented in perpendicular directions on Si(001). Higher temperature annealing resulted in the increased particles size and faceting. Electrical characteristics showed the critical defect concentration related to Fe.

Original languageEnglish
Pages (from-to)A31-A36
JournalAnimal
Volume1534
Issue number1
DOIs
Publication statusPublished - Nov 18 2013

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nanomaterials
annealing
evaporation
iron
temperature
particle size
spectroscopy
ambient temperature
scanning electron microscopy
electrons
energy
methodology

Keywords

  • self-assembly
  • semiconducting
  • structural

ASJC Scopus subject areas

  • Animal Science and Zoology

Cite this

Iron silicide nanostructures prepared by E-Gun evaporation and annealing on Si(001). / Molnár, G.; Dózsa, L.; Vértesy, Z.; Horváth, Z.

In: Animal, Vol. 1534, No. 1, 18.11.2013, p. A31-A36.

Research output: Contribution to journalArticle

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