Ion mixing enhanced wafer bonding for silicon-on-insulator structures

Research output: Contribution to journalArticle

Abstract

Bonding of a 1360-nm-thick single crystalline silicon membrane onto an oxidized wafer was enhanced by ion mixing using 1250 keV 14N + ion implantation. The oxidized wafer was covered by a thin, thermally grown oxide (134 nm) and implantation was performed either in random or in channeling directions through the membrane. Ion doses were in the range of 0.5×1016 to 5×1016 atoms/cm2. Implantation was followed by an annealing at 1000°C for 0.5 h in nitrogen gas to remove the radiation defects. Due to the effect of implantation, the bonding quality was very good in all cases. In addition, results of Rutherford backscattering spectroscopy and transmission electron microscopy showed that using channeled implantation with a dose of 0.5×1016 atoms/cm2, the adherent silicon layer was of high quality (∼1.5×103 dislocations/cm2) and the interface remained sharp.

Original languageEnglish
Pages (from-to)5602-5605
Number of pages4
JournalJournal of Applied Physics
Volume72
Issue number12
DOIs
Publication statusPublished - 1992

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implantation
insulators
wafers
silicon
ions
membranes
dosage
atoms
ion implantation
backscattering
nitrogen
transmission electron microscopy
annealing
oxides
defects
radiation
gases
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ion mixing enhanced wafer bonding for silicon-on-insulator structures. / Khánh, N. Q.; Fried, M.; Tóth, A.; Gyulai, J.; Pécz, B.

In: Journal of Applied Physics, Vol. 72, No. 12, 1992, p. 5602-5605.

Research output: Contribution to journalArticle

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abstract = "Bonding of a 1360-nm-thick single crystalline silicon membrane onto an oxidized wafer was enhanced by ion mixing using 1250 keV 14N + ion implantation. The oxidized wafer was covered by a thin, thermally grown oxide (134 nm) and implantation was performed either in random or in channeling directions through the membrane. Ion doses were in the range of 0.5×1016 to 5×1016 atoms/cm2. Implantation was followed by an annealing at 1000°C for 0.5 h in nitrogen gas to remove the radiation defects. Due to the effect of implantation, the bonding quality was very good in all cases. In addition, results of Rutherford backscattering spectroscopy and transmission electron microscopy showed that using channeled implantation with a dose of 0.5×1016 atoms/cm2, the adherent silicon layer was of high quality (∼1.5×103 dislocations/cm2) and the interface remained sharp.",
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AU - Tóth, A.

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AU - Pécz, B.

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