Ion-induced tracks in Bi4Ge3O12 and Bi12GeO20 crystals

G. Szenes, D. Fink, S. Klaumünzer, F. Pászti, Á Péter

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

Single crystalline Bi4Ge3O12 and Bi 12GeO20 samples were irradiated at room temperature with various fluences of O, Ne, Ar, Kr, Xe and Pb ions. The ion energies were 0.35, 1.0 and 1.7 MeV/u. The irradiated samples were investigated by Rutherford backscattering in channeling geometry. The track radii derived from the data depend on electronic stopping power and ion velocity. The average threshold values for track formation are (3.3 ± 0.5) and (2.6 ± 0.3) keV/nm for Bi4Ge3O12 and Bi12GeO 20, respectively. The results are in good agreement with an analytical thermal spike model previously developed.

Original languageEnglish
Pages (from-to)243-245
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume245
Issue number1
DOIs
Publication statusPublished - Apr 1 2006
EventProceedings of the Sixth International Symposium on Swift Heavy Ions in Matter (SHIM 2005) -
Duration: May 28 2005May 31 2005

Keywords

  • Insulators
  • Ion-irradiation
  • Thermal spike
  • Tracks
  • Velocity effect

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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