Ion-induced tracks in Bi4Ge3O12 and Bi12GeO20 crystals

G. Szenes, D. Fink, S. Klaumünzer, F. Pászti, A. Péter

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Single crystalline Bi4Ge3O12 and Bi 12GeO20 samples were irradiated at room temperature with various fluences of O, Ne, Ar, Kr, Xe and Pb ions. The ion energies were 0.35, 1.0 and 1.7 MeV/u. The irradiated samples were investigated by Rutherford backscattering in channeling geometry. The track radii derived from the data depend on electronic stopping power and ion velocity. The average threshold values for track formation are (3.3 ± 0.5) and (2.6 ± 0.3) keV/nm for Bi4Ge3O12 and Bi12GeO 20, respectively. The results are in good agreement with an analytical thermal spike model previously developed.

Original languageEnglish
Pages (from-to)243-245
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume245
Issue number1
DOIs
Publication statusPublished - Apr 2006

Fingerprint

Ions
Crystals
crystals
ions
Rutherford backscattering spectroscopy
stopping power
Power electronics
spikes
backscattering
fluence
Crystalline materials
radii
thresholds
Geometry
room temperature
geometry
electronics
Temperature
energy
Hot Temperature

Keywords

  • Insulators
  • Ion-irradiation
  • Thermal spike
  • Tracks
  • Velocity effect

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

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title = "Ion-induced tracks in Bi4Ge3O12 and Bi12GeO20 crystals",
abstract = "Single crystalline Bi4Ge3O12 and Bi 12GeO20 samples were irradiated at room temperature with various fluences of O, Ne, Ar, Kr, Xe and Pb ions. The ion energies were 0.35, 1.0 and 1.7 MeV/u. The irradiated samples were investigated by Rutherford backscattering in channeling geometry. The track radii derived from the data depend on electronic stopping power and ion velocity. The average threshold values for track formation are (3.3 ± 0.5) and (2.6 ± 0.3) keV/nm for Bi4Ge3O12 and Bi12GeO 20, respectively. The results are in good agreement with an analytical thermal spike model previously developed.",
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T1 - Ion-induced tracks in Bi4Ge3O12 and Bi12GeO20 crystals

AU - Szenes, G.

AU - Fink, D.

AU - Klaumünzer, S.

AU - Pászti, F.

AU - Péter, A.

PY - 2006/4

Y1 - 2006/4

N2 - Single crystalline Bi4Ge3O12 and Bi 12GeO20 samples were irradiated at room temperature with various fluences of O, Ne, Ar, Kr, Xe and Pb ions. The ion energies were 0.35, 1.0 and 1.7 MeV/u. The irradiated samples were investigated by Rutherford backscattering in channeling geometry. The track radii derived from the data depend on electronic stopping power and ion velocity. The average threshold values for track formation are (3.3 ± 0.5) and (2.6 ± 0.3) keV/nm for Bi4Ge3O12 and Bi12GeO 20, respectively. The results are in good agreement with an analytical thermal spike model previously developed.

AB - Single crystalline Bi4Ge3O12 and Bi 12GeO20 samples were irradiated at room temperature with various fluences of O, Ne, Ar, Kr, Xe and Pb ions. The ion energies were 0.35, 1.0 and 1.7 MeV/u. The irradiated samples were investigated by Rutherford backscattering in channeling geometry. The track radii derived from the data depend on electronic stopping power and ion velocity. The average threshold values for track formation are (3.3 ± 0.5) and (2.6 ± 0.3) keV/nm for Bi4Ge3O12 and Bi12GeO 20, respectively. The results are in good agreement with an analytical thermal spike model previously developed.

KW - Insulators

KW - Ion-irradiation

KW - Thermal spike

KW - Tracks

KW - Velocity effect

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