Ion implantation process modelling

G. Drozdy, T. Lohner, P. Revesz, K. Tarnay, J. Gyulai

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A simulation program for implantation (IMPLAN) has been developed as part of a complete silicon planar technology simulation program (STEP, Silicon Technology Evaluation Program). The input parameters of IMPLAN are the type of implanted ions, the target material, the kind of the eventual covering surface layer and its thickness, the energy of the ion implantation and the dose. The output is the dopant profile in numerical or graphical format. Joined half-Gaussian and Pearson distributions are used in the program in order to get high accuracy. To measure implanted depth profiles we used a high resolution Rutherford backscattering (RBS) technique. Comparison of the experimental results ans simulations shows that the difference between theory and experiment is mostly less than the errors of the measurements.

Original languageEnglish
Pages (from-to)125-128
Number of pages4
JournalVacuum
Volume33
Issue number1-2
DOIs
Publication statusPublished - 1983

Fingerprint

Silicon
Ion implantation
ion implantation
Rutherford backscattering spectroscopy
Pearson distributions
implantation
Doping (additives)
Ions
simulation
silicon
profiles
normal density functions
format
backscattering
surface layers
coverings
Experiments
dosage
evaluation
output

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Ion implantation process modelling. / Drozdy, G.; Lohner, T.; Revesz, P.; Tarnay, K.; Gyulai, J.

In: Vacuum, Vol. 33, No. 1-2, 1983, p. 125-128.

Research output: Contribution to journalArticle

Drozdy, G, Lohner, T, Revesz, P, Tarnay, K & Gyulai, J 1983, 'Ion implantation process modelling', Vacuum, vol. 33, no. 1-2, pp. 125-128. https://doi.org/10.1016/0042-207X(83)90544-4
Drozdy, G. ; Lohner, T. ; Revesz, P. ; Tarnay, K. ; Gyulai, J. / Ion implantation process modelling. In: Vacuum. 1983 ; Vol. 33, No. 1-2. pp. 125-128.
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