Ion implantation induced damage in silicon carbide studied by Non-Rutherford elastic backscattering

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Non-Rutherford elastic scattering is a suitable method to obtain concentrations of low atomic number constituents which are difficult to determine when the scattering cross section is Rutherford type. An enhancement factor of over a hundred for cross section of 12C can be reached using the 12C(α,α)12C nuclear resonance at 4260 keV. This resonance was utilized to investigate the ion bombardment induced disorder in the carbon sublattice of 4H-Sic. The disorder was created by implantation of 200 keV and 350 keV AI+ ions at room temperature.

Original languageEnglish
Title of host publication2000 International Conference on Ion Implantation Technology, IIT 2000 - Proceedings
Pages131-134
Number of pages4
DOIs
Publication statusPublished - Dec 1 2000
Event2000 13th International Conference on Ion Implantation Technology, IIT 2000 - Alpbach, Austria
Duration: Sep 17 2000Sep 22 2000

Publication series

NameProceedings of the International Conference on Ion Implantation Technology

Other

Other2000 13th International Conference on Ion Implantation Technology, IIT 2000
CountryAustria
CityAlpbach
Period9/17/009/22/00

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Szilágyi, E., Kótai, E., Khánh, N. Q., Zolnai, Z., Battistig, G., Lohner, T., & Gyulai, J. (2000). Ion implantation induced damage in silicon carbide studied by Non-Rutherford elastic backscattering. In 2000 International Conference on Ion Implantation Technology, IIT 2000 - Proceedings (pp. 131-134). [924108] (Proceedings of the International Conference on Ion Implantation Technology). https://doi.org/10.1109/.2000.924108